1) magnetic tunnel junction
磁性隧道结
1.
Microfabrication methods of magnetic tunnel junctions with high tunneling magnetoresistance;
高磁电阻磁性隧道结的几种微制备方法研究
2.
Microfabrication of magnetic tunnel junctions on 4-inch Si/SiO_2 substrate;
4英寸热氧化硅衬底上磁性隧道结的微制备
3.
A simple method for studing the electron transport properties in the magnetic tunnel junction with an arbitrary barrier shape;
处理具有任意形状势垒的磁性隧道结中电子输运的一个简单方法
2) magnetic tunneling junction
磁性隧道结
1.
Fabrication and characterization of La_(2/3)Ca_(1/3)MnO_3/Eu_2CuO_4/La_(2/3)Ca_(1/3)MnO_3 magnetic tunneling junctions;
La_(2/3)Ca_(1/3)MnO_3/Eu_2CuO_4/La_(2/3)Ca_(1/3)MnO_3磁性隧道结的制备与表征
2.
Fully epitaxial Fe/MgO/Fe(001)magnetic tunneling junctions(MTJs)were fabricated on GaAs(001)-4×6 surface.
采用分子束外延技术在GaAs(001)-4×6衬底上外延出Fe/MgO/Fe(001)单晶磁性隧道结。
3.
Using ion\|beam\|sputtering technique, Fe/Al\-2O\-3/Fe magnetic tunneling junctions (MTJ) were fabricated.
用离子束溅射方法制备磁性隧道结 (MTJ) 。
3) magnetic tunnel junctions
磁性隧道结
1.
Electron holography investigation on the barrier structures of Co based magnetic tunnel junctions;
Co基磁性隧道结势垒结构的电子全息研究
2.
In this review article we present an overview update on spin-dependent tunnelling(SDT)in magnetic tunnel junctions in theory and experiments.
全面回顾和总结了磁性隧道结中自旋相关的隧穿这一研究领域的理论和实验方面的最新研究进展。
4) Double magnetic tunneling junction
磁性双隧道结
5) magnetic tunnel junction
磁隧道结
1.
The samples of the Ni80Fe20/Al2O3/Ni80Fe20 magnetic tunnel junction were prepared with the magnetron-sputtering technique and annealed then under various condition.
为提高磁隧道结磁电阻性能提供了新的尝试。
6) magnetic tunneling junction
磁隧道结
1.
The latest progresses of study on the magnetoresistance effect of MgO magnetic tunneling junctions are reported.
概述了近年来关于氧化镁磁隧道结磁电阻效应的最新研究进展,介绍了势垒层厚度、偏压、温度以及微结构等因素对磁电阻效应的影响。
补充资料:S-I-N隧道结(S-I-Ntunneljunction)
S-I-N隧道结(S-I-Ntunneljunction)
是指超导体(S)和正常金属(N)间夹有绝缘介质层(I)组成的隧道结。在结两侧加上电压V时的隧道电流I与V的I-V特性曲线示意图如下。
当0<eV<Δ(T)时几乎不无隧道电流,这里Δ(T)为超导能隙。当|V|≥V0=|Δ(T)/e|时,超导电子对被拆散激发为二个准粒子而隧穿绝缘层势垒形成隧道电流。拆散电子对所需最小能量为2Δ(T),一个电子平均需能隙为Δ(T)的能量。由于激发为准粒子带有集体效应,故在|V|≥V0时电流很快上升,而接近N-I-N的隧道电流。这种不同于单个正常电子隧道N-I-N的单粒子隧道称双粒子隧道,类似现象也发生在S-I-S和S1-I-S2隧道结。这些隧道结若在S一侧同时有多个超导电子对被拆散激发而同时隧穿到另一侧(需遵从泡利原理),这种隧道过程称多粒子隧道,但这种概率是很小的。利用这些隧道结可测定超导体的能隙。
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参考词条