1) tunneling magnetoresistance
隧道磁阻
1.
Numerical calculations indicate that increasing bias voltage will enhance the spin injection efficiency(SIE) in single magnetic junction but decrease the tunneling magnetoresistance(TM.
数值计算表明,增加偏压对于提高单结的自旋注入效率是有利的,但会降低单结或由两个磁性隧道单结组成的双结的隧道磁阻(TMR)。
3) TMR
隧道磁电阻
1.
The V -I characteristics and tunnel - magneto resistance (TMR) of the junctions were measured and discussed.
采用磁控溅射技术制备了Ni80Fe20/Al2O3/Ni80Fe20磁性隧道结样品,观测了该隧道结次伏安特性及隧道磁电阻的磁化曲线。
4) tunneling magnetoresistance
隧道磁电阻
1.
The EH results reveal that the annealing process can well improve the quality of interfaces between barrier and ferromagnetic electrodes, and of AlO_x barrier itself, which are responsible for the improvement of tunneling magnetoresistance in MTJs after anneal at 280?℃.
这与该磁性隧道结经过280℃退火处理后,隧道磁电阻值大大增加是一致的。
2.
With plasma oxidization to create an insulating layer of Al\-2O\-3,we have repeatedly fabricated Ni 80 Fe 20 /Al\-2O\-3/Co magnetic tunnel junctions which show obvious tunneling magnetoresistance (TMR) effect.
样品的隧道磁电阻（ＴＭＲ） 比值在室温下最高可达６－０ ％ ，翻转场（ｓｗｉｔｃｈ ｆｉｅｌｄ）可低于８００Ａ／ｍ ，平台宽度约２４００Ａ／ｍ 。
3.
The spin-polarized transport and tunneling magnetoresistance(TMR) in ferromagnet/half-metal/ferromagnet tunnel junctions are studied by quantum-mechanical tunneling method.
运用量子力学的隧穿方法讨论一个铁磁/半金属/铁磁隧道结(FM/HM/FM)中的自旋极化输运和隧道磁电阻(TMR)。
5) tunneling magnetoresistance junctions
隧道磁阻结
补充资料：变磁阻式传感器
将位移、转速、加速度等非电物理量转换为磁阻变化的传感器。它包括电感式传感器、变压器式传感器和电涡流式传感器。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条