1) molecular beam epitaxy
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分子束外延
1.
Structure and properties of InGaP/GaAs epilayers grown by solid-source molecular beam epitaxy with a GaP decomposition source;
分解GaP源固态分子束外延生长InGaP/GaAs的结构和性能
2.
Photoluminescence study of (GaAs_(1-x)Sb_x In_yGa_(1-y)As)GaAs bilayer quantum well grown by molecular beam epitaxy;
分子束外延生长的(GaAs_(1-x)Sb_x In_yGa_(1-y)As)GaAs量子阱光致发光谱研究
3.
Study on ultrahigh carbon -doped p -t ype InGaAs grown by gas source molecular beam epitaxy;
气态源分子束外延生长重碳掺杂p型InGaAs研究
2) MBE
[英][,em bi: 'i:] [美]['ɛm 'bi 'i]
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分子束外延
1.
PHOTOLUMINESCENCE STUDY ON MBE LOW TEMPERATURE GROWN GaAs;
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低温下分子束外延生长GaAs的光致发光研究
2.
Studies of MBE-Grown ZnS_xSe_(1-x) Films for Liquid-Crystal-Light-Valve;
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分子束外延生长液晶光阀用ZnS_xSe_(1-x)薄膜的研究
3.
The Study of HgCdTe on Si by MBE;
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Si基大面积碲镉汞分子束外延研究
3) Molecular beam epitaxy(MBE)
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分子束外延
1.
This paper describes the Molecular Beam Epitaxy(MBE)technology and its applications in large area homogeneous super thin epilayers growth.
本文阐述了分子束外延( MBE) 技术的特点以及在实现大面积均匀的超薄外延层生长中的应用。
2.
The use of reflection high-energy electron diffraction(RHEED) has been proven to be a powerful tool to understand growth mechanisms of GaSb by molecular beam epitaxy(MBE).
采用分子束外延技术,在GaAs衬底上生长GaSb薄膜时,利用反射式高能电子衍射仪(RHEED)对衬底表面清洁状况、外延层厚度等进行在线监控。
3.
In order to get better property quantum dots(QDs) with longer wavelength,better uniformity and higher luminous efficiency,three types of InAs/GaAs QDs were researched and fabricated on GaAs(100)substrates by molecular beam epitaxy(MBE)technology through the S-K strained self-assembled mode.
为了获得波长长、均匀性好和发光效率高的量子点,采用分子束外延(MBE)技术和S-K应变自组装模式,在GaAs(100)衬底上研究生长了三种InAs量子点。
4) molecular beam epitaxy (MBE)
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分子束外延
1.
The use of reflection high-energy electron diffraction (RHEED) intensity oscillations has proven to be a powerful tool to understand growth mechanisms of GaAs, AlAs and AlGaAs in molecular beam epitaxy (MBE).
采用分子束外延技术,在GaAs衬底上生长GaAs,AlAs和AlGaAs时,实现RHEED图像和RHEED强度振荡的实时监测已被证明是一种有效工具。
2.
The designed 940 nm wavelength laser structure has been obtained by successful molecular beam epitaxy (MBE) growth w.
设计的激光器外延结构采用分子束外延 (MBE)方法生长 ,成功获得具有较低激射阈值的 94 0nm波长激光器外延片。
3.
3μm InAs/GaAs quantum dots (QDs) laser Diodes have been grown by molecular beam epitaxy (MBE).
用分子束外延(MBE)生长了含应力缓冲层的InAs量子点激光器。
5) SSMBE
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固源分子束外延
1.
Quantum well structure film of 6H-SiC/3C-SiC/6H-SiC was fabricated on 6H-SiC(0001) with the substrate temperature of 1350 K by solid source molecular beam epitaxy (SSMBE) through the variation of Si flux rate.
利用固源分子束外延(SSMBE)生长技术,在1350K的衬底温度下,通过改变Si束流强度,在6H-SiC(0001)面上外延生长6H-SiC/3C-SiC/6H-SiC量子阱结构薄膜,并用反射高能电子衍射(RHEED)与光致发光(PL)谱对生长的薄膜的晶型和发光特性进行表征。
6) solid source molecular beam epitaxy
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固源分子束外延
1.
Single crystalline 3C-SiC thin films were grown on Si(111)at different substrate temper- atures by solid source molecular beam epitaxy(SSMBE).
利用固源分子束外延(SSMBE)技术,在Si(111)衬底上异质外延生长3C-SiC单晶薄膜,通过RHEED、XRD、AFM、XPS等实验方法研究了衬底温度对薄膜结构、形貌和化学组分的影响。
补充资料:分子束外延
分子式:
CAS号:
性质:在超高真空条件下,精确控制蒸发源给出的中性分子束流强,在基片上外延成膜的技术。MBE设备由真空系统,蒸发源,监控系统和分析测试系统构成。已在GaAs、InP、A1GaAs、InGaP、InGaAs等III-V族半导体单晶膜外延,掺杂控制(原子面掺杂、平面掺杂)上取得良好效果。另外制备出Ⅱ~Ⅵ族ZnS单晶膜;CaF2、SrF2、BaF2等绝缘膜;PtSi、Pd2Si、NiSi2、CoSi2等硅化物;并制备出多种异质外延构件和器件。用MBE法在(100)SrTiO3和(100)Zr基片上生长的yBa2Cu3O7膜Tc分别为88K和87K。
CAS号:
性质:在超高真空条件下,精确控制蒸发源给出的中性分子束流强,在基片上外延成膜的技术。MBE设备由真空系统,蒸发源,监控系统和分析测试系统构成。已在GaAs、InP、A1GaAs、InGaP、InGaAs等III-V族半导体单晶膜外延,掺杂控制(原子面掺杂、平面掺杂)上取得良好效果。另外制备出Ⅱ~Ⅵ族ZnS单晶膜;CaF2、SrF2、BaF2等绝缘膜;PtSi、Pd2Si、NiSi2、CoSi2等硅化物;并制备出多种异质外延构件和器件。用MBE法在(100)SrTiO3和(100)Zr基片上生长的yBa2Cu3O7膜Tc分别为88K和87K。
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