1) RF-plasma MBE
RF-Plasma分子束外延
2) MBE
[英][,em bi: 'i:] [美]['ɛm 'bi 'i]
分子束外延
1.
PHOTOLUMINESCENCE STUDY ON MBE LOW TEMPERATURE GROWN GaAs;
低温下分子束外延生长GaAs的光致发光研究
2.
Studies of MBE-Grown ZnS_xSe_(1-x) Films for Liquid-Crystal-Light-Valve;
分子束外延生长液晶光阀用ZnS_xSe_(1-x)薄膜的研究
3.
The Study of HgCdTe on Si by MBE;
Si基大面积碲镉汞分子束外延研究
3) molecular beam epitaxy
分子束外延
1.
Structure and properties of InGaP/GaAs epilayers grown by solid-source molecular beam epitaxy with a GaP decomposition source;
分解GaP源固态分子束外延生长InGaP/GaAs的结构和性能
2.
Photoluminescence study of (GaAs_(1-x)Sb_x In_yGa_(1-y)As)GaAs bilayer quantum well grown by molecular beam epitaxy;
分子束外延生长的(GaAs_(1-x)Sb_x In_yGa_(1-y)As)GaAs量子阱光致发光谱研究
3.
Study on ultrahigh carbon -doped p -t ype InGaAs grown by gas source molecular beam epitaxy;
气态源分子束外延生长重碳掺杂p型InGaAs研究
4) Molecular beam epitaxy(MBE)
分子束外延
1.
This paper describes the Molecular Beam Epitaxy(MBE)technology and its applications in large area homogeneous super thin epilayers growth.
本文阐述了分子束外延（ ＭＢＥ） 技术的特点以及在实现大面积均匀的超薄外延层生长中的应用。
2.
The use of reflection high-energy electron diffraction(RHEED) has been proven to be a powerful tool to understand growth mechanisms of GaSb by molecular beam epitaxy(MBE).
采用分子束外延技术,在GaAs衬底上生长GaSb薄膜时,利用反射式高能电子衍射仪(RHEED)对衬底表面清洁状况、外延层厚度等进行在线监控。
3.
In order to get better property quantum dots(QDs) with longer wavelength,better uniformity and higher luminous efficiency,three types of InAs/GaAs QDs were researched and fabricated on GaAs(100)substrates by molecular beam epitaxy(MBE)technology through the S-K strained self-assembled mode.
为了获得波长长、均匀性好和发光效率高的量子点,采用分子束外延(MBE)技术和S-K应变自组装模式,在GaAs(100)衬底上研究生长了三种InAs量子点。
5) molecular beam epitaxy (MBE)
分子束外延
1.
The use of reflection high-energy electron diffraction (RHEED) intensity oscillations has proven to be a powerful tool to understand growth mechanisms of GaAs, AlAs and AlGaAs in molecular beam epitaxy (MBE).
采用分子束外延技术,在GaAs衬底上生长GaAs,AlAs和AlGaAs时,实现RHEED图像和RHEED强度振荡的实时监测已被证明是一种有效工具。
2.
The designed 940 nm wavelength laser structure has been obtained by successful molecular beam epitaxy (MBE) growth w.
设计的激光器外延结构采用分子束外延 (MBE)方法生长 ,成功获得具有较低激射阈值的 94 0nm波长激光器外延片。
3.
3μm InAs/GaAs quantum dots (QDs) laser Diodes have been grown by molecular beam epitaxy (MBE).
用分子束外延(MBE)生长了含应力缓冲层的InAs量子点激光器。
6) SSMBE
固源分子束外延
1.
Quantum well structure film of 6H-SiC/3C-SiC/6H-SiC was fabricated on 6H-SiC(0001) with the substrate temperature of 1350 K by solid source molecular beam epitaxy (SSMBE) through the variation of Si flux rate.
利用固源分子束外延(SSMBE)生长技术,在1350K的衬底温度下,通过改变Si束流强度,在6H-SiC(0001)面上外延生长6H-SiC/3C-SiC/6H-SiC量子阱结构薄膜,并用反射高能电子衍射(RHEED)与光致发光(PL)谱对生长的薄膜的晶型和发光特性进行表征。
补充资料：inductively coupled plasma quantometer
分子式：
CAS号：
性质： 又称同时型等离子体光谱仪。以电感耦合高频等离子体光源激发试样，可同时测定多种元素的发射光谱分析仪器。由电感耦合高频等离子体光源、炬管室、光谱仪、测光系统和数据处理系统组成。由高频发生器提供能量送至耦合线圈，将同轴型等离子炬管置于线圈内。通冷却气、辅助气和载气(氩)。用特斯拉线圈(Tesla coil)点火，在炬管顶端形成氩等离子体。试样通过雾化系统由载气带入等离子体激发，经分光、光电转换、测量、数据处理后给出待测元素含量。
CAS号：
性质： 又称同时型等离子体光谱仪。以电感耦合高频等离子体光源激发试样，可同时测定多种元素的发射光谱分析仪器。由电感耦合高频等离子体光源、炬管室、光谱仪、测光系统和数据处理系统组成。由高频发生器提供能量送至耦合线圈，将同轴型等离子炬管置于线圈内。通冷却气、辅助气和载气(氩)。用特斯拉线圈(Tesla coil)点火，在炬管顶端形成氩等离子体。试样通过雾化系统由载气带入等离子体激发，经分光、光电转换、测量、数据处理后给出待测元素含量。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条