PHOTOLUMINESCENCE STUDY ON MBE LOW TEMPERATURE GROWN GaAs;

Studies of MBE-Grown ZnS_xSe_(1-x) Films for Liquid-Crystal-Light-Valve;

The Study of HgCdTe on Si by MBE;

Structure and properties of InGaP/GaAs epilayers grown by solid-source molecular beam epitaxy with a GaP decomposition source;

Photoluminescence study of (GaAs_(1-x)Sb_x In_yGa_(1-y)As)GaAs bilayer quantum well grown by molecular beam epitaxy;

Study on ultrahigh carbon -doped p -t ype InGaAs grown by gas source molecular beam epitaxy;

This paper describes the Molecular Beam Epitaxy(MBE)technology and its applications in large area homogeneous super thin epilayers growth.

The use of reflection high-energy electron diffraction(RHEED) has been proven to be a powerful tool to understand growth mechanisms of GaSb by molecular beam epitaxy(MBE).

In order to get better property quantum dots(QDs) with longer wavelength,better uniformity and higher luminous efficiency,three types of InAs/GaAs QDs were researched and fabricated on GaAs(100)substrates by molecular beam epitaxy(MBE)technology through the S-K strained self-assembled mode.

The use of reflection high-energy electron diffraction (RHEED) intensity oscillations has proven to be a powerful tool to understand growth mechanisms of GaAs, AlAs and AlGaAs in molecular beam epitaxy (MBE).

The designed 940 nm wavelength laser structure has been obtained by successful molecular beam epitaxy (MBE) growth w.

3μm InAs/GaAs quantum dots (QDs) laser Diodes have been grown by molecular beam epitaxy (MBE).

Quantum well structure film of 6H-SiC/3C-SiC/6H-SiC was fabricated on 6H-SiC(0001) with the substrate temperature of 1350 K by solid source molecular beam epitaxy (SSMBE) through the variation of Si flux rate.