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1)  SiC devices
SiC器件
2)  SiC based discrete devices
SiC分立器件
3)  SiC power device
SiC功率器件
4)  silicon carbide
SiC
1.
Status of Studies on the Oxidation of Silicon Carbide;
SiC材料氧化行为研究进展
2.
Large-scale silicon carbide nanowires were prepared by using pure silicon powder and phenolic resin,which were mixed,molded,carbonizated,and then subjected to the microwave heating with a rate of 10℃/min between 1300℃and 1400℃in the static argon atmosphere for 0.
5~2h的微波加热条件下制备了SiC纳米线。
3.
The properties and microwave absorbing performance for high temperature of silicon carbide are reviewed,and the improvements on its electrical properties by doping are discussed.
综述了SiC的性质和作为高温吸收剂的吸波性能,并对掺杂可引起其电学性能的改善作了一定的阐述。
5)  serial interference cancellation(SIC)
串行干扰相消检测器(SIC)
6)  devices
器件
1.
Preparation and functionalization of nanoscale materials and fabrication of devices;
纳米材料的制备、功能化及其器件的性质研究(英文)
2.
The Example of ISP Devices Application Design;
在系统可编程器件设计应用实例
3.
Integrated collinear acousto-optic devices based on LiNbO_3 waveguide;
基于LiNbO_3波导的共线集成声光器件
补充资料:bioactive glass-ceramic composite reinforced by SiC whisker
分子式:
CAS号:

性质:由碳化硅晶须与生物活性玻璃陶瓷复合而成的生物陶瓷复合材料。高强度、高弹性模量、无毒的碳化硅晶须在陶瓷基材中弥散分布,使材料中的裂纹相对均匀,裂纹扩展发生转向和分支;外力作用下碳化硅晶须拔出时产生的拔出效应,使复合陶瓷的弯曲强度达460MPa,断裂韧性达4.3MPa·m1/2,维伯尔系数高达24.7,标志着它是可承力的生物陶瓷复合材料。

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