1.
Reseach on high-power class E power amplier based on SiC MESFET
基于SiC器件的高效E类功率放大器
2.
Theoretical and Experimental Study on Ohmic Contacts to Silicon Carbide;
SiC器件欧姆接触的理论和实验研究
3.
Study on 4H-SiC Devices Fabricated by Ion Implantations and Their Temperature Characteristics;
离子注入制备4H-SiC器件及其温度特性研究
4.
Theoretical Investigation of Silicon Carbide Materials and Silicon Carbide Based MOS Devices;
SiC材料及SiC基MOS器件理论研究
5.
A Study on the Effct of Interface Properties of SiO_2/SiC on Performances of N-Channel SiC Mosfet;
SiO_2/SiC界面质量对n沟SiC MOSFET器件性能影响的研究
6.
Advantage and Development Foreground of SiC Pwer Sewmiconductor Devices
SiC功率半导体器件的优势及发展前景
7.
Research Progress in Irradiation Effects of 6H-SiC Materials and Devices
6H-SiC材料与器件辐照效应的研究进展
8.
The Novel Structure and Experimental Study for 4H-SiC Microwave Power MESFETs;
4H-SiC MESFETs微波功率器件新结构与实验研究
9.
Recent Development and Future Perspective of Silicon Carbide Power Devices--Opportunity and Challenge
宽禁带半导体SiC功率器件发展现状及展望
10.
Calculation of the High Temperature Distribution on the SiC/Fe/SiC Joint
SiC/Fe/SiC连接件高温温度场分布的计算
11.
The Parameter Model and the Design of RF Amplifier for 4H-SiC MESFETs;
4H-SiC MESFET参数模型和射频放大器的设计
12.
The Design of SiC Sensor Signal Sampling and Processing System;
SiC传感器信号采集与处理系统设计
13.
Study of RF Power Amplifiers Based on SiC MESFET
基于SiC MESFET射频功率放大器研究
14.
Study on 4H-SiC SAM-APD Structure UV Detector
4H-SiC SAM-APD结构紫外探测器的研究
15.
EFFECT OF ADDITIVES ON PROPERTIES OF SIC-AL_2O_3 CERAMIC FOAM FILTERS
添加剂对SiC-Al_2O_3陶瓷过滤器性能的影响
16.
Preparation and Mechanical Properties for C/SiC Composites and Components;
C/SiC复合材料及其构件的制备与力学性能
17.
STRAIN TESTING OF SiC/Al FUNCTIONALLY GRADIENT MATERIAL GAS HELM SAMPLE
SiC/Al梯度功能材料燃气舵样件的应变测试
18.
Structural Analysis and Optimum Design of Poly-SiC Electrostatic Comb-Drive Actuator;
多晶SiC梳齿驱动器的结构分析与优化设计