1) medium frequency magnetron sputtering
中频磁控溅射
1.
Al containing diamond-like carbon(Al-DLC) thin films were deposited on Si substrate by medium frequency magnetron sputtering.
采用中频磁控溅射技术在单晶硅表面制备含铝类金刚石(Al-DLC)薄膜,利用原子力显微镜、X射线光电子能谱仪、红外光谱仪、纳米压痕仪和微摩擦磨损试验机等考察薄膜表面形貌、结构及其摩擦磨损性能。
2.
Er~(3+)_- doped Al_2O_3 films were fabricated by medium frequency magnetron sputtering, strong photoluminescence at 1535 nm was detected at the room temperature.
利用中频磁控溅射方法沉积制备了掺铒Al2O3薄膜,室温下测量了薄膜在1535nm波长处的光致发光光谱和抽运功率、掺铒浓度、退火温度对光致发光光谱强度的影响。
3.
This thesis presents investigations on the structure and properties of A1N films and nc-AlN/a-Si3N4 prepared by medium frequency magnetron sputtering.
本工作研究了中频磁控溅射制备AIN薄膜和nc-AIN／a-Si_3N_4复合薄膜及其结构与特性，并且研究了Mn~+离子注入AIN薄膜的电学和磁学性质。
2) mid-frequency magnetron sputtering
中频磁控溅射
1.
Using a Zn target with 2% Al,ZnO:Al(ZAO) thin films were deposited on glass substrate by mid-frequency magnetron sputtering.
采用中频磁控溅射工艺,以2%的Al掺杂的Zn(纯度99。
2.
Diamond-like carbon (DLC) thin films were deposited onto Si (100) and high speed steel substrates by mid-frequency magnetron sputtering system (SP0806AS,Beijing Power tech Co.
采用SP0806AS中频磁控溅射镀膜机,在硅(100)和高速钢基体上,采用双石墨靶在不同功率下沉积了类金刚石薄膜。
3) medium-frequency magnetron sputtering
中频磁控溅射
1.
The complex deposited process which fitted medium-frequency magnetron sputtering together with multi-arc ion plating,was utilized to prepare the MoS2 /Zr composite coating on the surface of cemented carbides YT14.
采用新型中频磁控溅射技术及多弧离子镀相结合的复合镀膜工艺,在硬质合金YT14基体上制备了MoS2/Zr复合薄膜。
4) middle frequency sputtering
中频磁控溅射
1.
Yb:Erco-doped Al_2O_3 thin films have been prepared by Middle frequency sputtering (MFS)and microwave electron cyclotron resonance plasma plasma source (ECR-MW).
分别利用中频磁控溅射(MFS)方法和微波电子回旋共振(ECR-MW)等离子体方法制备了Yb:Er共掺Al_2O_3薄膜,研究了氧气与氩气比例、样品荧光谱强度、最佳Yb:Er比例、最佳退火温度、样品表面形貌等性质。
5) intermediate frequency unbalanced magnetron sputtering
中频磁控溅射
1.
The properties and microstructure of TiAlN films deposited by arc ion plating compounded with intermediate frequency unbalanced magnetron sputtering;
电弧离子镀与中频磁控溅射复合制备TiAlN薄膜的研究
2.
The TiAlN films were deposited on polished surface of Si(100) wafer and high speed steel separately by arc ion plating compounded with intermediate frequency unbalanced magnetron sputtering.
采用Ti靶电弧离子镀与Al靶中频磁控溅射相结合的复合工艺,分别在单晶硅抛光面和高速钢抛光面两种基体上成功地制备了TiAlN薄膜样品。
6) medium frequency reactive magnetron sputtering
中频反应磁控溅射
1.
Effect of Ce~(3+)concentration on luminescent properties of Al_2O_3:Ce~(3+)films by medium frequency reactive magnetron sputtering;
掺杂浓度对中频反应磁控溅射制备Al_2O_3：Ce~(3+)薄膜发光性能的影响
补充资料：磁控溅射
分子式：
CAS号：
性质：用一个环形永久磁体在乎板形靶上产生环形磁场，在磁场作用下，电子被约束在一个环状空间内，形成高密度的等离子环。在等离子环内，电子不断地使Ar原子变成Ar离子，Ar离子被加速后打向靶表面，把靶内的原子溅射出来，沉积在基片上形成薄膜。若靶材为导体，溅射电源可用直流或射频电源，如靶材是绝缘体，则必须用射频电源。用多源共溅射加后处理法可制备双面薄膜。将基片放置在靶中心线上，称为正轴溅射，基片放在靶轴线外；称为偏轴溅射。磁控溅射是广泛采用的制膜方法。
CAS号：
性质：用一个环形永久磁体在乎板形靶上产生环形磁场，在磁场作用下，电子被约束在一个环状空间内，形成高密度的等离子环。在等离子环内，电子不断地使Ar原子变成Ar离子，Ar离子被加速后打向靶表面，把靶内的原子溅射出来，沉积在基片上形成薄膜。若靶材为导体，溅射电源可用直流或射频电源，如靶材是绝缘体，则必须用射频电源。用多源共溅射加后处理法可制备双面薄膜。将基片放置在靶中心线上，称为正轴溅射，基片放在靶轴线外；称为偏轴溅射。磁控溅射是广泛采用的制膜方法。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条