1) RF magnetron sputtering
射频磁控溅射
1.
Structure and stress distribution properties of ZnO thin films prepared by RF magnetron sputtering;
射频磁控溅射ZnO薄膜的结构和应力特性
2.
Preparation of boron carbon nitride thin films by RF magnetron sputtering;
射频磁控溅射制备硼碳氮薄膜
3.
RF magnetron sputtering of GaP thin film and computer simulation of its depositing process;
GaP薄膜的射频磁控溅射沉积及其计算机模拟
2) Radio frequency magnetron sputtering
射频磁控溅射
1.
Structural and optical properties of Mg_xZn_(1-x)O thin films deposited by radio frequency magnetron sputtering;
射频磁控溅射法生长Mg_xZn_(1-x)O薄膜的结构和光学特性
2.
Hydroxyfluorapatite(FHA) bioactive coating was deposited on Ti6Al4V substrate by radio frequency magnetron sputtering.
本文采用射频磁控溅射技术在钛合金(Ti6Al4V)基体上制备出含氟羟基磷灰石(FHA)生物涂层,探讨该涂层组织结构,不同氟含量和温度对涂层晶化程度的影响。
3.
ZnO films are deposited on substrates of silicon slices by radio frequency magnetron sputtering technique.
采用射频磁控溅射法在抛光硅片上沉积了一系列ZnO薄膜样品。
3) R.F. magnetron sputtering
射频磁控溅射
1.
Gallium nitride thin films have been successfully grown on the Ga-diffused Si (111) substrates through nitriding Ga_(2)O_(3 )thin films deposited by r.
采用射频磁控溅射工艺在扩镓硅基上溅射Ga2O3薄膜,氮化反应组装GaN晶体膜,并对其生长条件进行研究。
2.
Vanadium oxide thin film samples were prepared by R.
采用射频磁控溅射的方法,在不同条件下制备了氧化钒薄膜样品,分别在不同温度条件下做了退火处理,并对退火前后样品做了X射线衍射(XRD)、X射线光电子能谱(XPS)和激光扫描共聚焦显微镜测试与分析,旨在得出制备良好的V2O5 薄膜的条件。
3.
Transparent conducting Zn-Sn-O films with low resistivity and good adhesion were deposited on organic substrates by r.
采用射频磁控溅射技术首次在有机薄膜衬底上低温制备出具有低电阻率和良好附着性的Zn-Sn-O透明导电膜。
4) radio-frequency magnetron sputtering
射频磁控溅射
1.
Nanometer TiO_2-CeO_2 composite films on flexible polyethylene terephthalate substrate were fabricated by radio-frequency magnetron sputtering.
采用射频磁控溅射法在柔性基体聚对苯二甲酸乙二醇酯上制备了纳米TiO_2-CeO_2复合薄膜。
2.
Metal aluminum films were deposited on AAO templates by radio-frequency magnetron sputtering.
用射频磁控溅射法在阳极氧化铝模板表面制备了金属铝膜。
3.
TiB_2 coatings were prepared by radio-frequency magnetron sputtering technique on the substrates of steel and silicon.
利用射频磁控溅射技术在硅和钢片上沉积了TiB2涂层。
5) RF-magnetron sputtering
射频磁控溅射
1.
Comparisons between ZnO thin films fabricated by RF-magnetron sputtering and Electron-beam evaporation
射频磁控溅射和电子束蒸发制备ZnO薄膜特性的比较
2.
Multi-groups of SiC thin-films samples were prepared by RF-magnetron sputtering.
采用射频磁控溅射法制备了多组SiC薄膜样品。
3.
Methods:The nature HA films were prepared by electron beam evaporation and rf-magnetron sputtering techniques.
方法:用电子束蒸发和射频磁控溅射两种技术制备了天然HA薄膜。
6) RF magnetron co-sputtering
射频磁控共溅射
1.
SiO 2/TiO 2 composite thin films were prepared by RF magnetron co-sputtering.
采用射频磁控共溅射法制备了SiO2 /TiO2 复合薄膜 ,通过控制SiO2 靶与TiO2 靶的溅射时间可调节SiO2 与TiO2 的比例。
补充资料：磁控溅射
分子式：
CAS号：
性质：用一个环形永久磁体在乎板形靶上产生环形磁场，在磁场作用下，电子被约束在一个环状空间内，形成高密度的等离子环。在等离子环内，电子不断地使Ar原子变成Ar离子，Ar离子被加速后打向靶表面，把靶内的原子溅射出来，沉积在基片上形成薄膜。若靶材为导体，溅射电源可用直流或射频电源，如靶材是绝缘体，则必须用射频电源。用多源共溅射加后处理法可制备双面薄膜。将基片放置在靶中心线上，称为正轴溅射，基片放在靶轴线外；称为偏轴溅射。磁控溅射是广泛采用的制膜方法。
CAS号：
性质：用一个环形永久磁体在乎板形靶上产生环形磁场，在磁场作用下，电子被约束在一个环状空间内，形成高密度的等离子环。在等离子环内，电子不断地使Ar原子变成Ar离子，Ar离子被加速后打向靶表面，把靶内的原子溅射出来，沉积在基片上形成薄膜。若靶材为导体，溅射电源可用直流或射频电源，如靶材是绝缘体，则必须用射频电源。用多源共溅射加后处理法可制备双面薄膜。将基片放置在靶中心线上，称为正轴溅射，基片放在靶轴线外；称为偏轴溅射。磁控溅射是广泛采用的制膜方法。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条