1) LT-GaAs
低温生长的砷化镓
2) low-temperature-grown GaAs
低温生长砷化镓
1.
The terahertz(THz) radiation properties of low-temperature-grown GaAs photoconductive antenna(LT-GaAs PCA) are studied in order to improve the THz radiation efficiency.
研究了低温生长砷化镓光电导天线(LT-GaAs PCA)产生太赫兹(THz)波的辐射特性。
2.
Four smallaperture photaconductive antennas of BowTie and Dipole structures were fabricated on low-temperature-grown GaAs (LTG-GaAs) grown at 230 ℃ and 250 ℃ respectively,and annealed at 475 ℃.
在生长温度为230 ℃和250 ℃,退火温度为475 ℃的低温生长砷化镓(LTG-GaAs)上制备了领结(BowTie)和偶极子(Dipole)两种电极结构的小孔径光电导天线。
3) VB-GaAs
垂直布里奇曼法生长的砷化镓
4) GaAs thermometer
砷化镓温度计
5) Gallium arsenide
砷化镓
1.
In this paper, polyferric silicate sulfate (PFSS) was prepared and arsenic-containing wastewater from gallium arsenide plant was flocculated by it.
用自制的无机高分子聚合硅酸铁(PFSS),对砷化镓生产中的含砷废水进行了混凝处理。
2.
Arsenic containing wastewater from gallium arsenide production was treated by coagulation process using self made polyferric metasilicate.
用自制的聚合硅酸铁 (PFSiC)对砷化镓生产中的含砷废水进行混凝处理。
3.
A great deal of wastewater was produced in the manufacturing of gallium arsenide wafers,and the main contamination was gallium arsenide particles in suspension.
砷化镓晶片生产过程中 ,产生大量废水 ,其中主要污染物是悬浮状态的砷化镓微粒。
6) GaAs
砷化镓
1.
Study on recovering Ga from GaAs scraps by vacuum metallurgy;
真空法处理砷化镓废料回收镓的研究
2.
A Quantitative Method of AB Microscopic Defects in Semi-insulating GaAs Single Crystals;
半绝缘砷化镓单晶中AB微缺陷的定量测量方法
3.
Electron Acoustic Microscopic Study of GaAs Epitaxial Layers;
砷化镓半导体外延层的电子声成像
补充资料：低温
低温
hypothermia
低温状态下脑组织对缺氧的耐受性明显增加。体温低于37℃时，每减低1℃，脑组织代谢率减少6.7%，颅内压减低5.5%，在人工呼吸、心脏按压的同时或稍后应给予降温处理，可采用正规冬眠疗法使体温降至肛温35℃左右，目前尤为重视头部局部降温，戴冰帽，头温降至32℃左右，重症要降温3～5天。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条