1) breakdown voltage curve
反向击穿曲线
1.
In the test of breakdown voltage of power transistor with SIPOS passivation layer before packaging,an abnormal curve of breakdown voltage was found,which was a double-line breakdown voltage curve.
通过对SIPOS钝化的功率晶体管管芯进行逐层腐蚀,再进行反向击穿曲线测试,以及扫描电镜对SIPOS层结构进行能谱分析,结果显示SIPOS层中氧含量过大,从而产生界面效应造成击穿电压回移,并解释了在应用特定测试仪器测试时显示出"双线击穿曲线"的现象,同时提出解决双线击穿曲线现象的方法。
4) reverse breakdown voltage
反向击穿电压
1.
A two-dimensional(2-D) analytical model of reverse breakdown voltage for 4H-SiC super junction structure is proposed.
提出了4H-SiC超级结结构反向击穿电压的二维解析模型。
5) breakdown voltage
反向击穿电压
1.
The linear relation between the reverse breakdown voltage and un-doping active region′s thickness of PIN light emitting diode(LED) was analyzed by using the ideal PIN structure′s electric field distribution model.
通过利用突变结PIN理想结构电场分布模型,分析了该结构发光二极管(LED)反向击穿电压与非故意掺杂有源区厚度的线性相关性。
2.
Compared with natural Si diodes fabricated with the same process parameters, the reverse breakdown voltage of isotopic pure Si diodes was improved .
两批都实验结果发现,硅-28二极管的反向击穿电压有了较大程度的增加,大约分别从45 V提高到80V,80V 提高到140V左右。
6) reverse breakdown current.
反向击穿电流
补充资料：OC曲线(见抽样特性曲线)
OC曲线(见抽样特性曲线)
operating characteristic curve: see operating characteristic curve of sampling
O(:quxlanOC曲线(叮旧瓜叮唱Cha比‘teristic~抽样特性曲线。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条