1.
The Effect of Annealing Treatment on Reverse Breakdown Voltage of Schottky Diodes;
退火处理对肖特基二极管反向击穿电压影响的研究
2.
The distinguishing feature of this plan is to adopt silicon backward photoelectric diode as target screen and to scan with fast electron.
特点是采用“反向击穿硅光电二极管”做靶面,并用快电子扫描。
3.
Applying the opposite voltage bias to widen the tunneling gap and raise the electrical resistance would reopen the switch.
施加反向电压以增大穿隧间隙，提高电阻，可以重新将开关断开。
4.
Determination of electric strength at power frequence for capacitor paper
GB/T12656-1990电容器纸工频击穿电压测定法
5.
Method of test for breakdown voltage of cable paper at power frequence
GB/T3333-1982电缆纸工频击穿电压试验方法
6.
Breakdown Voltage and ESD Protection of RF-LDMOS;
射频LDMOS的击穿电压与静电保护
7.
peak reverse voltage
反向峰值电压峰值反向电压
8.
The Differentiation of Lightning Shielding Failure and Back Flashover on High-Voltage Transmission Line;
高压输电线路雷电绕击、反击的识别
9.
Study of Improving the Breakdown Voltage of GaAs MESFET;
提高GaAs MESFET击穿电压的研究
10.
Breakdown characteristics of gas switch under nanosecond pulse voltage
纳秒脉冲电压下气体开关的击穿特性
11.
High-voltage Nanoseconds GaAs Photoconductive Switch and Its Breakdown Characteristic
高压ns光电导开关及其击穿特性研究
12.
circuit repetitive peak reverse voltage
电路反向重复峰值电压
13.
circuit crest working reverse voltage
电路反向工作峰值电压
14.
Process Improvement to Enhance HV PMOS Drain Breakdown Voltage;
提升高压PMOS漏极击穿电压的工艺改进方法
15.
non repetitive peak reverse voltage
不重复峰值反向电压
16.
Study of Restrike Overvoltage When Switching off Shunt Capacitors
并联电容器分闸重击穿操作过电压研究
17.
A high-voltage and high-current photoconductive semiconductor switch and its breakdown characteristics
高压超大电流光电导开关及其击穿特性研究
18.
Covered wires--Method for test of breakdown voltage by means of steel balls
GB/T1343.9-1984绕包线击穿电压试验方法钢珠法