1) forward breakdown
正向击穿
2) forward second breakdown
正向二次击穿
4) reverse breakdown voltage
反向击穿电压
1.
A two-dimensional(2-D) analytical model of reverse breakdown voltage for 4H-SiC super junction structure is proposed.
提出了4H-SiC超级结结构反向击穿电压的二维解析模型。
5) breakdown voltage
反向击穿电压
1.
The linear relation between the reverse breakdown voltage and un-doping active region′s thickness of PIN light emitting diode(LED) was analyzed by using the ideal PIN structure′s electric field distribution model.
通过利用突变结PIN理想结构电场分布模型,分析了该结构发光二极管(LED)反向击穿电压与非故意掺杂有源区厚度的线性相关性。
2.
Compared with natural Si diodes fabricated with the same process parameters, the reverse breakdown voltage of isotopic pure Si diodes was improved .
两批都实验结果发现,硅-28二极管的反向击穿电压有了较大程度的增加,大约分别从45 V提高到80V,80V 提高到140V左右。
6) reverse breakdown current.
反向击穿电流
补充资料:输出反馈(见线性二次型次优控制)
输出反馈(见线性二次型次优控制)
output feedback
3h日c卜口fon以以{输出反馈型次优控制。(output王eedbaek)见线性二次
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
参考词条