In this model,a Reynolds equation for the slurry flow field was deduced,and the thickness and pressure distribution of slurry film between wafer and polishing pad in chemical and mechanical polishing(CMP) process was simulated by calculation of partial differential equations under different conditions.

According to the characteristics of grinding polishing film and portable polishing machine made by ourselves, this paper has designed and developed a polishing experiment platform on the basis of MCS51 series.

Study on the performances of polishing slurry in chemical mechanical polishing;

Preparation of ultra-fined Al_2O_3 slurry and its polishing properties on disk CMP;

Tantalum barrier layer of copper interconnection in ULSI and optimization of CMP slurry;

According to the analysis of the structure of polishing pad,polishing machine and polishing slurry,the merits of fixed abrasives (FA)CMP were presented.

Based on the analysis of mechanism of silicon polishing, this paper discusses the influence of polishing slurry on polishing quality.

Many factors may affect LiNbO3 CMP,such as polishing slurry,polishing pad and polishing technological parameters.

Through experiment and analysis, different types of suitable polishing solutions to improve productivity and the quality of polished surface were proposed.

Under the same experimental condition(same polishing time,temperature and sapphire concentration),four groups of CdSe wafers were polished using four different polishing solutions.