1) acid polishing slurry
酸性抛光液
2) alkaline slurry
碱性抛光液
1.
The influencing factors of alkaline slurry on the surface roughness was analyzed,such as abrasive,oxidizing agent,pH value and active agent.
分析介绍了Cu层表面粗糙度对器件性能的影响以及超大规模集成电路中多层Cu布线CMP的作用机理,研究分析了碱性抛光液对Cu的表面粗糙度的影响因素,如磨料、氧化剂、pH值、表面活性剂等对表面粗糙度的影响。
3) acid electro-polishing
酸性电化学抛光
4) phosphoric acid sulfuric acid system polishing solution
磷酸-硫酸体系抛光液
5) slurry
[英]['slʌri] [美]['slɝɪ]
抛光液
1.
Study on the performances of polishing slurry in chemical mechanical polishing;
CMP抛光半导体晶片中抛光液的研究
2.
Preparation of ultra-fined Al_2O_3 slurry and its polishing properties on disk CMP;
超细氧化铝抛光液的制备及其抛光特性研究
3.
Tantalum barrier layer of copper interconnection in ULSI and optimization of CMP slurry;
ULSI多层铜布线钽阻挡层及其CMP抛光液的优化
6) polishing slurry
抛光液
1.
According to the analysis of the structure of polishing pad,polishing machine and polishing slurry,the merits of fixed abrasives (FA)CMP were presented.
经过对传统化学机械抛光技术的研究与分析,指出了目前ULSI制造中使用的传统化学机械抛光技术的缺点,通过对固结磨料化学机械抛光中的抛光垫结构、抛光机原理及抛光液的分析,得出了固结磨料化学机械抛光技术的优点,同时还对硅片固结磨料化学机械抛光的缺陷进行了研究。
2.
Based on the analysis of mechanism of silicon polishing, this paper discusses the influence of polishing slurry on polishing quality.
在分析硅衬底的抛光机理的基础上,主要讨论了抛光液对硅衬底抛光质量的影响,同时对抛光液中各成分的选择作了分析研究,采用不含钠离子的有机碱和高效的无钠螯合剂减少了金属离子的玷污,对活性剂影响吸附的作用机理进行了分析,得到了一种小粒径、高速率和低损伤的无钠抛光液。
3.
Many factors may affect LiNbO3 CMP,such as polishing slurry,polishing pad and polishing technological parameters.
影响LiNbO3化学机械抛光速率的因素很多,如抛光液组成、抛光垫质量、抛光工艺参数等。
补充资料:抛光剂,抛光混合剂
CAS:68909-13-7
中文名称:焙烧提浓的氟碳铈镧矿;抛光剂,抛光混合剂
英文名称:Bastnaesite, calcined concentrate;Calcined bastnasite;bastnaesite, calcined conc.;polishing compound;Bastnaesite,calcined concentrate
中文名称:焙烧提浓的氟碳铈镧矿;抛光剂,抛光混合剂
英文名称:Bastnaesite, calcined concentrate;Calcined bastnasite;bastnaesite, calcined conc.;polishing compound;Bastnaesite,calcined concentrate
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