1) (Fe/Pd)n films
(Fe/Pd)n薄膜
1.
After diffusion heat treatment, (Fe/Pd)n films changed from face-center-cubic (fcc) structure to face-center-tetragonal (fct) structure.
结果表明:医用316L不锈钢支架表面磁性膜的最佳结构为"Pd/Fe/Pd",经扩散热处理后,(Fe/Pd)n薄膜从fcc结构转变为fct结构,薄膜均匀、致密、结合强度良好,有效磁场强度可达5×10-4T以上,有效磁性可维持6个月。
2) Fe-Pd films
Fe-Pd薄膜
3) Fe-N thin films
Fe-N薄膜
1.
Effects of substrate temperature on structure,morphology and magnetic properties of Fe-N thin films;
衬底温度对Fe-N薄膜结构、形貌及磁性能的影响
2.
Effect of bias voltage on the structure and properties of Fe-N thin films prepared by direction current magnetron sputtering;
偏压对直流磁控溅射Fe-N薄膜结构及性能的影响
3.
The Fe-N thin films were deposited on single crystal NaCl(100) and glass substrates via DC magnetron sputtering with an Ar/N2 gas mixture(N2/(Ar+N2)=10%) as the discharging gas.
采用直流磁控溅射方法,以Ar/N2为放电气体(N2/(Ar+N2)=10%),在玻璃和NaCl(100)单晶片上分别沉积获得Fe-N薄膜样品。
4) Fe-N films
Fe-N 薄膜
1.
The effect of nitrogen partial pressure on the structures and magnetic properties of Fe-N films was investigat.
Fe-N 薄膜因其具有高饱和磁化强度、低矫顽力,有望获得较高的微波磁导率,而在集成化微磁器件、抗电磁干扰以及新型雷达波吸收材料研究中受到广泛和高度的重视。
2.
The effects of preparation conditions on the structures andmagnetic properties of Fe-N films and the relation between the saturationmagnetization and film thickness were investigated in detail.
采用射频磁控溅射法制备了具有高饱和磁化强度的 Fe-N 薄膜。
5) Pd/Fe magnetic films
Pd/Fe 磁性薄膜
6) Fe-N-O thin films
Fe-N-O薄膜
补充资料：[3-(aminosulfonyl)-4-chloro-N-(2.3-dihydro-2-methyl-1H-indol-1-yl)benzamide]
分子式：C16H16ClN3O3S
分子量：365.5
CAS号：26807-65-8
性质：暂无
制备方法：暂无
用途：用于轻、中度原发性高血压。
分子量：365.5
CAS号：26807-65-8
性质：暂无
制备方法：暂无
用途：用于轻、中度原发性高血压。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条