2) metal induced
金属诱导
1.
This article presents the technology of Poly-Si films by metal induced crystallization,and discusses crystalline mechanism.
本文综述了金属诱导非晶硅薄膜进行低温晶化的研究,讨论了金属诱导法的晶化机理,分析了金属诱导晶化过程中的主要影响因素,对不同的金属诱导法进行比较,展望了金属诱导法的进一步发展。
2.
We developed a new process for low temperature crystallization of amorphous silicon films, by metal induced crystallization of amorphous silicon films at low temperature.
介绍了一种非晶硅薄膜低温晶化的新工艺———金属诱导非晶硅薄膜低温晶化。
3.
A novel technology for preparation of poly silicon films metal induced crystallization(MIC) of amorphous silicon films is introduced.
本文介绍了金属诱导晶化非晶态硅制备多晶硅薄膜的新方法 ,综述了制备金属 /非晶态硅复合薄膜的各种方法与晶化结果 ,着重介绍了金属低温诱导的机理及其在器件应用方面的可行
3) metal Ni induced
金属镍诱导
4) metal inducing electroless plating
金属诱导化学镀
1.
The unsupported and supported NiCoB bimetal amorphous alloy catalysts were prepared by metal inducing electroless plating(MIEP) method.
采用金属诱导化学镀(MIEP)法分别制备了非负载型和负载型NiCoB双金属非晶态合金催化剂,并用XRDI、CP和TEM等方法表征了催化剂的结构、组成和形貌等。
5) metal induced crystallization
金属诱导晶化
1.
Study on the large grain size poly-Si prepared by metal induced crystallization using nickel chemical source;
大尺寸化学Ni源金属诱导晶化多晶硅的研究
2.
Amorphous silicon (a Si) films is deposited by PECVD and is crystallized by metal induced crystallization (MIC) at various temperatures.
利用金属诱导晶化 (Metal Induced Crystallization,MIC)的方法研究了 a- Si/Ni的低温晶化 ,MIC的晶化温度降低到 440℃。
6) MIC
[英][maɪk] [美][maɪk]
金属诱导晶化
1.
Process and material characterization of crystallization of amorphous silicon(a-Si) by metal-induced crystallization(MIC) and metal-induced lateral crystallization(MILC) using sputtered Ni on(amorphous) silicon film to prepare polysilicon(p-Si) film were investigated.
对在氢化非晶硅薄膜(a-Si∶H)上溅射金属Ni的样品进行金属诱导晶化(MIC)/金属诱导横向晶化(MILC),制备多晶硅薄膜(p-Si)的工艺及薄膜特性进行了研究。
补充资料：重金
1.很多金钱;很高代价。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条