1) MIC poly-Si
金属诱导晶化多晶硅
1.
The basis mechanism and main process flow of metal induced crystallization poly-Si(MIC poly-Si)dynamic gettering are discussed,and its applications are studied for use in poly-Si thin film transistor devices.
在研究金属诱导晶化多晶硅材料(MIC poly-Si)和以之为有源层的poly-Si TFT的过程中,发现在MIC多晶硅薄膜中含有部分残余的镍成份。
2) metal induced crystallized poly-crystalline Si film
金属诱导多晶硅
3) metal induced crystallization
金属诱导晶化
1.
Study on the large grain size poly-Si prepared by metal induced crystallization using nickel chemical source;
大尺寸化学Ni源金属诱导晶化多晶硅的研究
2.
Amorphous silicon (a Si) films is deposited by PECVD and is crystallized by metal induced crystallization (MIC) at various temperatures.
利用金属诱导晶化 (Metal Induced Crystallization,MIC)的方法研究了 a- Si/Ni的低温晶化 ,MIC的晶化温度降低到 440℃。
4) MIC
[英][maɪk] [美][maɪk]
金属诱导晶化
1.
Process and material characterization of crystallization of amorphous silicon(a-Si) by metal-induced crystallization(MIC) and metal-induced lateral crystallization(MILC) using sputtered Ni on(amorphous) silicon film to prepare polysilicon(p-Si) film were investigated.
对在氢化非晶硅薄膜(a-Si∶H)上溅射金属Ni的样品进行金属诱导晶化(MIC)/金属诱导横向晶化(MILC),制备多晶硅薄膜(p-Si)的工艺及薄膜特性进行了研究。
5) Metal-induced crystallization
金属诱导晶化
1.
The method of metal-induced crystallization of amorphous silicon is discussed in this thesis.
Poly-Si薄膜采用金属诱导晶化法制备。
6) solution-based metal-induced crystallization
溶液法金属诱导晶化
1.
Investigation on the improvement of the stability and uniformity of solution-based metal-induced crystallization poly-Si using surface-embellishment;
表面修饰改善溶液法金属诱导晶化薄膜稳定性与均匀性研究
补充资料：多晶硅（polycrystalsilicon）
多晶硅（polycrystalsilicon）
由大量取向不同的小的硅单晶体构成的薄膜或体硅材料称为多晶硅。非掺杂的多晶硅具有很高的电阻率，一般为106～107Ωcm。多晶硅中由于大量晶粒间界的存在形成缺陷态，使自由载流子的浓度减少，散射大大增加，迁称率减少，杂质扩散系数增加。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条