1) High-Voltage SOI LDMOS
高压SOI LDMOS
2) high voltage LDMOS
高压LDMOS
1.
The paper gives the equivalent circuit of a high voltage LDMOS at very high temperatures,and analyzes performance of leakage current and intrinsic parameters of a LDMOS from 25℃ to 300℃.
本文提出了高压LDMOS的高温等效电路 ,讨论了LDMOS泄漏电流及本征参数在 2 5℃～ 30 0℃范围内随温度变化规律 。
3) patterned SOI LDMOS
图形化SOI LDMOS
1.
By using the software of ISE and the patterned SOI LDMOS with good performance,the relationship between transconductance and the thickness of gate oxide and SOI layer ,the concentration of the drift region and the channel are all discussed in this paper.
借助ISE软件,以调试后各参数性能优良的图形化SOI LDMOS器件为仿真平台,研究并分析了栅氧化层厚度,漂移区浓度,沟道浓度,SOI层厚度四个结构工艺参数对图形化SOI LDMOS跨导gm的影响。
4) high voltage power LDMOS
高压功率LDMOS
1.
An analysis of threshold voltage temperature coefficient for high voltage power LDMOS;
高压功率LDMOS阈值电压温度系数的分析
6) Embedded Semiconductor Control Rectifier LDMOS (ESCR-LDMOS)
ESCR-LDMOS
补充资料：高压
①较高的压强。②较高的电压。③高气压区。④心脏收缩时血液对血管的压力。⑤残酷迫害；极度压制：～政策│～手段。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条