1) SBCO thin film
SBCO超导薄膜
2) superconducting thin film
超导薄膜
1.
Microwave properties of YBCO/LAO and YBCO/MgO superconducting thin films;
YBCO/LAO和YBCO/MgO超导薄膜的微波性质
2.
Effect of Tl_2O partial pressure on component phases and properties of Tl_2Ba_2CaCu_2O_8 superconducting thin films fabricated at lower temperature in pure argon atmosphere;
低温纯Ar气中Tl_2O分压对Tl_2Ba_2CaCu_2O_8超导薄膜相组成与性能的影响
3.
High T_c superconducting thin film of YBa_2Cu_3O_(7-x) and Zro_2 buffer layer have been de-posited in situ on(100)silicon substrate with excimer laser.
利用ＺｅＣｌ准分子激光在（１００）Ｓｉ基片上原位淀积出ＺｒＯ＿２缓冲层和ＹＢａ＿２Ｃｕ＿３Ｏ＿（７－ｘ）高Ｔ＿ｃ超导薄膜，薄膜的零电阻温度为８２Ｋ。
3) Superconducting film
超导薄膜
1.
The results shown that the superconducting films were polycrystalline with stronger c-axis texture.
对多层蒸镀经高温退火制备的T_c≥83K的超导薄膜进行了XRD及EPMA研究。
2.
Hollow cylindrical cathode, dc magnetron sputtering method was used to fabricate the YBCOsuperconducting films on LaAlO_3 and Zr(Y)O_2 substrate.
采用中空柱状阴极直流磁控溅射装置制备了YBCO超导薄膜。
3.
The results proved that PED could be an advisable method for superconducting film deposition.
高温超导薄膜生长是研究超导现象和超导器件的基础,一直是凝聚态物理研究的一个重要课题。
4) Superconducting thin films
超导薄膜
1.
In Situ annealed superconducting thin films are acquired by pulsed laser deposition method.
采用脉冲激光沉积的方法在Al2O3(0001)基片上先生成MgB混和薄膜,然后采用原位后退火的方法生成MgB2超导薄膜,采用磁测量(MT)、X射线衍射、扫描电子显微镜技术分析了各种沉积及退火条件对MgB2超导薄膜表面形貌、晶体结构、超导电性的影响。
2.
The most promising application of high-TC superconducting thin films is passive microwave devices and the fabrication of large-area double-sided YBCO thin films is a convenient way to realize large scale production and multi-component integration.
YBCO高温超导薄膜在高性能微波无源器件有着良好的应用前景,而大面积双面薄膜的制备在满足批量生产及多器件集成的同时,能够进一步提高微波无源器件的性能。
5) superconducting MgB2 thin film
MgB2超导薄膜
1.
The superconducting MgB2 thin films were prepared on Al2O3 polycrystalline substrates by a two-step ex-situ magnesium-diffusion method with the precursor boron thin films grown by CVD from B2H6.
以高纯乙硼烷(B2H6)为B源,采用化学气相沉积(CVD)方法在多晶Al2O3衬底上沉积B薄膜,然后在Mg蒸气中异位退火来制备MgB2超导薄膜。
6) MgB_2 thin film
MgB_2超导薄膜
1.
Microwave measurements of the MgB_2 thin film;
MgB_2超导薄膜的微波测量
补充资料：[3-(aminosulfonyl)-4-chloro-N-(2.3-dihydro-2-methyl-1H-indol-1-yl)benzamide]
分子式：C16H16ClN3O3S
分子量：365.5
CAS号：26807-65-8
性质：暂无
制备方法：暂无
用途：用于轻、中度原发性高血压。
分子量：365.5
CAS号：26807-65-8
性质：暂无
制备方法：暂无
用途：用于轻、中度原发性高血压。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条