1) temperature dependent PL measurement
变温光致发光谱
1.
from temperature dependent PL measurement spectra we determine the binding energy of the acceptors to be 131 meV at 81 K, suggests that it is a Sb_(Zn)-2V_(Zn) complex with activation energy of about160 meV.
XRD和拉曼谱表明Sb~(3+)代替Zn~(2+)进入ZnO的格位,随着浓度的增加纳米粒子半径变小;通过变温光致发光谱,计算出在81 K时受主束缚能为131 meV,认为形成了Sb_(Zn)-2V_(Zn)复合体,理论计算其受主束缚能为160 meV。
2) Low-temperature photoluminescence
低温光致发光谱
3) Photoluminescence (PL) spectra at room temperature
室温光致发光谱
4) variable-temperature photoluminescence
变温光致发光
1.
The variable-temperature photoluminescence spectra of strained InAsxP1-x/InP heterostructuer were experimentally determined in the temperature range 13~300 K.
利用变温光致发光研究了InAs0。
5) photoluminescence spectroscopy (PL)
低温光致发光光谱
6) photoluminescence spectra
光致发光谱
1.
Broadband yellow luminescence in the photoluminescence spectra of n-GaN implanted by the different ions;
离子注入n型GaN光致发光谱中宽黄光发射带研究
2.
The influence of MgF_2 doping on the luminescence properties of lead tungstate(PbWO_4,PWO)crystal has been investi- gated by correlated measurements of transmission spectra and photoluminescence spectra and light yield.
通过透射光谱、光致发光谱、光产额的测试,研究了提拉法生长的掺MgF_2的钨酸铅(PbWO_4,PWO)晶体的发光性能。
3.
Photoluminescence spectra peaks as a function.
本文通过Ⅱ－Ⅵ族稀磁半导体超晶格ＺｎＳｅ／Ｚｎ１－ｘＭｎｘＳｅ的光致发光谱的测量，对其应力效应进行了讨论。
补充资料：光致致
1.有光泽而细腻貌。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条