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1)  photoluminescence(PL) spectra
光致发光(PL)谱
2)  Photoluminescence [,fəutəu,lju:mi'nesns]
光致发光(PL)
3)  photoluminescence (PL)
光致发光(PL)
4)  photoluminescence(PL)
光致发光(PL)
5)  PL spectrum
PL光谱
1.
According to the investigation of the well-known D-Band in the PL spectrum which has been associated to the misfit dislocations caused by the strain relaxation of SiGe epitaxial layer,the dislocations were found in both the SiGe epitaxial layer and the Si substrate.
对PL光谱中与SiGe外延层应变驰豫产生的失配位错相关的D-Band进行了分析,发现应变驰豫同时在SiGe层和Si衬底中诱生了位错。
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6)  photoluminescence spectra
光致发光谱
1.
Broadband yellow luminescence in the photoluminescence spectra of n-GaN implanted by the different ions;
离子注入n型GaN光致发光谱中宽黄光发射带研究
2.
The influence of MgF_2 doping on the luminescence properties of lead tungstate(PbWO_4,PWO)crystal has been investi- gated by correlated measurements of transmission spectra and photoluminescence spectra and light yield.
通过透射光谱、光致发光谱、光产额的测试,研究了提拉法生长的掺MgF_2的钨酸铅(PbWO_4,PWO)晶体的发光性能。
3.
Photoluminescence spectra peaks as a function.
本文通过Ⅱ－Ⅵ族稀磁半导体超晶格ＺｎＳｅ／Ｚｎ１－ｘＭｎｘＳｅ的光致发光谱的测量，对其应力效应进行了讨论。
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补充资料：场致发光材料(见电致发光材料)


场致发光材料(见电致发光材料)
electroluminescent material

见场致发光材料eleetrolumineseent material 电致发光材料。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条