1) photoluminescence excitation spectrum
光致发光激发谱
2) PLE spectrum
光致发光激发光谱
3) photo-excited
光致激发
4) photoluminescence spectra
光致发光谱
1.
Broadband yellow luminescence in the photoluminescence spectra of n-GaN implanted by the different ions;
离子注入n型GaN光致发光谱中宽黄光发射带研究
2.
The influence of MgF_2 doping on the luminescence properties of lead tungstate(PbWO_4,PWO)crystal has been investi- gated by correlated measurements of transmission spectra and photoluminescence spectra and light yield.
通过透射光谱、光致发光谱、光产额的测试,研究了提拉法生长的掺MgF_2的钨酸铅(PbWO_4,PWO)晶体的发光性能。
3.
Photoluminescence spectra peaks as a function.
本文通过Ⅱ－Ⅵ族稀磁半导体超晶格ＺｎＳｅ／Ｚｎ１－ｘＭｎｘＳｅ的光致发光谱的测量，对其应力效应进行了讨论。
5) photoluminescence spectrum
光致发光谱
1.
The synthesized powder was characterized by X -ray powder diffraction, high resolution transmission electron microscopy(HRTEM) and photoluminescence spectrum.
测量了合成粉末的X射线衍射谱、光致发光谱和高分辨透射电子显微像 (HRTEM) ,发现合成的粉末是平均粒度为 3 2nm的纤锌矿结构的氮化铝 ,此AlN中存在蓝光发光带 。
6) photoluminescence
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光致发光谱
1.
15) by magnetron sputtering and studied the transmittance and photoluminescence of the samples.
研究光的透过率和光致发光谱(PL谱)。
2.
Compared with the absorbance spectrum, the photoluminescence excited by laser with λ=395nm has Stokes shift.
与薄膜的吸收谱线比较,在375nm飞秒激光激发下测量的量子点的光致发光谱存在Stokes位移。
3.
The structural and optical properties were characterized with X-ray diffraction(XRD)and photoluminescence(PL),respectively.
利用X射线衍射(XRD)和光致发光谱(PL)对薄膜的结构和光学性能进行研究。
补充资料：光激发发光
光激发发光
物理学术语。某些荧光物质可将第一次光激发的信息贮存(记忆)下来，再次受到激发时则释放出与初次激发所接受的信息相应的荧光的现象，又称光致发光。具有此种现象的物质称辉尽性物质。辉尽性荧光物质在二次激发时发生荧光的强度与一次激发的光的波长相关，由X线作一次激发时则与X线的照射量相关。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条