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1)  CVD polycrystalline film
CVD多晶膜
2)  CVD coating machine
CVD镀膜机
3)  polycrystalline thin films
多晶薄膜
1.
SnTe polycrystalline thin films are deposited by the vacuum evaporation method from the former SnTe crystals, and their microstructure, electrical properties, and surface appearance are studied.
以制备的晶体为原料用真空蒸镀法制备了银灰色SnTe多晶薄膜,并对薄膜的显微结构、伏安特性及表面形貌进行了研究。
2.
In this paper,the absorption coefficient α(λ) ,the extinction coefficient k(λ) ,the refractive index n(λ) and the optical energy gap E g(λ) of CuInSe 2 polycrystalline thin films were studied by the properties of the reflection and transmission.
根据CuInSe2多晶薄膜的反射特性和透射特性,研究了薄膜的吸收系数α(λ)、消光系数k(λ)、折射率n(λ)以及光学禁带宽度Eg。
3.
AlSb polycrystalline thin films are prepared by vacuum co-evaporation and post-annealing.
采用元素共蒸发法结合退火处理制成了AlSb多晶薄膜。
4)  AlN polycrystalline films
AlN多晶膜
5)  polycrystalline thin film
多晶薄膜
1.
CdS/CdTe polycrystalline thin film is a new type of high efficiency and low-cost solar cells, which is most promising for application in refrigeration, because it has many advantages such as few crystalline defects, large gap of energy, high stability, inexpensive and convenient for large area deposition.
CdS CdTe多晶薄膜电池是一种利用CdS的优良窗口效应和CdTe良好的光电转换而做成的一种层叠的异质结薄膜太阳电池 ,是适用于制冷、新型、高效率、低成本的太阳能电池 ,具有低缺陷、能隙大、稳定性好的特点 ,并且制作工艺简单、经济 ,易于大面积沉积 ,而且还具有环保价值。
2.
PbTe polycrystalline thin films with 5 different stoichiometric proportions were deposited by the Vacuum Evaporation m.
此外,以所制备的晶体为原料用真空蒸镀法制备了5种组分的PbTe多晶薄膜,薄膜呈铜黄色,并对它们的显微结构、导电类型、电阻、电阻率和电导率特性进行了研究。
3.
The polycrystalline thin film CdTe solar cell is one of the thin film solar cells which are mainly investigated.
薄膜太阳电池的研究及其应用是当今光伏领域的研究热点,CdTe多晶薄膜太阳电池是受到广泛重视的薄膜电池之一,它的基本特点-多晶薄膜、化合物半导体、异质结器件-导致了一些重要的问题未能得到很好的解决。
6)  polysilicon films
多晶硅膜
1.
Two methods for preparing the doped polysilicon films ,the plasma-enhanced chemicalvapor deposition (PECVD)and the low-pressure chemical vapor deposition(LPCVD),havebeen studied experimentally.
对等离子增强化学气相淀积(PECVD)和低压化学气相淀积(LPCVD)两种方法制备掺杂多晶硅膜进行了详细的实验研究,通过时两者进行比较,对淀积的动力学特性、淀积膜的结构、膜的电特性与工艺条件的关系等进行了分析讨论。
2.
Based on a theoretical model for LPCVD, computer simulation of PECVD polysilicon films has been performed by employing the concept of "electron temperature".
在LPCVD理论模型基础上,通过引进“电子温度”,对 PECVD多晶硅膜进行了计算机模拟分析。
补充资料:[3-(aminosulfonyl)-4-chloro-N-(2.3-dihydro-2-methyl-1H-indol-1-yl)benzamide]
分子式:C16H16ClN3O3S
分子量:365.5
CAS号:26807-65-8

性质:暂无

制备方法:暂无

用途:用于轻、中度原发性高血压。

说明:补充资料仅用于学习参考,请勿用于其它任何用途。
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