说明:双击或选中下面任意单词,将显示该词的音标、读音、翻译等;选中中文或多个词,将显示翻译。
您的位置:首页 -> 词典 -> 气相沉积方法
1)  Vapor deposition method
气相沉积方法
2)  CVD
气相沉积法
1.
Nano sam-ples were grown under three different temperature conditions in CVD(Chemical Vapor Deposition) method.
要对纳米ZnO晶体进行了喇曼背散射几何配置下的喇曼测试与分析,其样品采用化学气相沉积法(CVD),分别在三种不同的温度下生长而成。
3)  vapor deposition
气相沉积法
1.
This paper reviewed the recent development of the intermetallic compounds,focusing on the preparation techniques including self-propagating high-temperature synthesis(SHS),mechanical alloying(MA),melting and casting technology and vapor deposition.
着重介绍了燃烧合成技术,机械合金化技术,熔炼和熔铸技术,气相沉积法的发展趋势及现状。
2.
In this paper several substrate surface activation methods for electroforming compos- ite material molds are briefly introduced,including traditional substrate surface activation,vapor deposition activation,DBD activation,photochemical activation and auto-catalytic activation,etc.
本文简单介绍了复合材料模具电铸工艺中基体表面活化的几种方法,包括传统的基体表面活化法、气相沉积法、介电层放电法、先化学法、自催化活化法等,讨论了它们的原理、优缺点、最新进展及应用前景。
4)  physical vapor deposition
物理气相沉积法
1.
Employing the physical vapor deposition method,Bi2O3 powder was heated to 1050 ℃ at normal pressure in a horizontal tube furnace with the protection of argon gas and oxygen,and then cooled and deposited naturally.
利用物理气相沉积法,在氩气和氧气保护下将氧化铋粉末在水平管式炉中常压加热至1050℃,然后降温沉积,在硅衬底上得到了大量具有规则矩形外形的二维纳米结构——片状氧化铋。
5)  Chemical vapor deposition
化学气相沉积法
1.
Silica coating was prepared by atmospheric pressure chemical vapor deposition taking HP40 steel plate as substrate,tetraethyl orthosilicate as silica source,and air as carrier gas and diluent.
以正硅酸乙酯为硅源物质、空气为载气和稀释气,采用常压化学气相沉积法在HP40钢表面制备了SiO2涂层;采用扫描电子显微镜和能量色散能谱表征了SiO2涂层的组织结构和表面形貌;考察了在乙烯裂解的工艺条件下SiO2涂层的结焦抑制能力。
2.
Single-walled carbon nanotubes have been prepared from coal gas by catalytic chemical vapor deposition technique with ferrocene as catalyst, and electrochemistry analysis was carried on supercapacitance using nanotubes as electrodes.
开发以煤气为碳源采用化学气相沉积法制备单壁碳纳米管,并对其作为超级电容器电极的电化学性能进行研究。
3.
 Carbon nanotubes (CNTs) is prepared by means of chemical vapor deposition (CVD) method.
利用化学气相沉积法制备碳纳米管(carbonnanotubes,CNTs),分析了气源、催化剂及温度等因素对CNTs形貌和纯度的影响。
6)  CVD
化学气相沉积法
1.
Well-aligned open-ended multi-walled carbon nanotube (MWCNT) arrays were prepared via chemical vapor deposition (CVD) method in porous anodic aluminum oxide (AAO) templates without depositing any transition metals as catalyst.
在不加过渡金属做催化剂的前提下,利用化学气相沉积法在二次阳极氧化法制得的多孔氧化铝模板中制备沉积了定取向碳纳米管阵列。
2.
In recent year, the helical carbon fibers are preparation by chemical vapor deposition method(CVD), which commercial acetylene as the carbon source, a nickel as catalyst, a sulfur compound as impurity, reaction temperature at 700~850℃.
近年来螺旋形碳纤维的制备方法主要是化学气相沉积法 (CVD法 )。
3.
In the present work, different shaped carbon nanotubes were produced by the general CVD and the template method at different temperature (600 ℃,700 ℃) with the reaction gas of acetylene.
以乙炔作为反应气 ,用化学气相沉积法 (CVD)和模板法在不同温度 (60 0℃、70 0℃ )下制备了不同形貌的碳纳米管 ,并采用TEM ,HRTEM ,SEM ,XRD ,Raman和充放电实验方法研究其形貌、结构和电化学嵌锂性能 。
补充资料:气相沉积
气相沉积
气相沉积

化学气相淀积[cvd(chemical vapor deposition)],指把含有构成薄膜元素的气态反应剂或液态反应剂的蒸气及反应所需其它气体引入反应室,在衬底表面发生化学反应生成薄膜的过程。在超大规模集成电路中很多薄膜都是采用cvd方法制备。

cvd特点:淀积温度低,薄膜成份易控,膜厚与淀积时间成正比,均匀性,重复性好,台阶覆盖性优良。

说明:补充资料仅用于学习参考,请勿用于其它任何用途。
参考词条