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1)  contact (potential) barrier
[电]接触势垒
2)  contact barrier
接触势垒
1.
It is primarily considered that,the contact barrier between electrode and material and the space charges inside polymers greatly affect their EL characteristics.
认为电极与材料的接触势垒和材料内部空间电荷影响着材料的电致发光特性。
3)  Schottky barrier contact
肖特基势垒接触
4)  contact potential
接触电势
1.
Discussion on contact potential of a semiconductor pn junction;
对半导体pn结接触电势的一个讨论
2.
This paper studies and analyses the key factors which induce fluctuation of corrosion data measured by electrical resistance probe based on principle of temperature compensation,and it was found that the main factos are contact potential between different metals and differential temperature potential due to the temperature drift.
基于温度补偿的原理,对引起电阻探针腐蚀监测数据波动的关键因素进行了大量研究和分析,发现异种金属间的接触电势和温差电势差,是造成测量数据温度漂移的主要原因。
3.
A new formula for calculating contact potential of level-ground grids(published in No.
文献1所提出的水平地网接触电势新公式在使用上仍有所不便。
5)  touch voltage
接触电势
1.
An analytic formula for calculation of maximum touch voltage in rectangular ground grids has been developed based on the regressive analytics.
由计算机回归校正,提出了计算矩形地网最大接触电势的公式,它较为准确,可供修订接地规程时参考。
6)  metal semiconductor barrier
金属 半导体接触势垒
补充资料:[3-(aminosulfonyl)-4-chloro-N-(2.3-dihydro-2-methyl-1H-indol-1-yl)benzamide]
分子式:C16H16ClN3O3S
分子量:365.5
CAS号:26807-65-8

性质:暂无

制备方法:暂无

用途:用于轻、中度原发性高血压。

说明:补充资料仅用于学习参考,请勿用于其它任何用途。
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