1) device,charge-injection (CID)
电荷注入器件
2) CID,charge injected device
CID,电荷注入器件
3) ICCD device
注入电荷耦合器件
4) charge injection derice
电荷注入元件
5) charge injection device
电荷注入检测器
1.
Analytical performance for the detection of non-metal elements by inductively coupled plasma atomic emission spectrometer (ICP-AES) with charge injection device(CID) was investigated.
研究了电荷注入检测器ICP光谱仪测定非金属元素的分析性能。
2.
The analytical performance of inductively coupled plasma spectrometer with charge injection device detector (CID) for rare earth elements was studied.
研究了电荷注入检测器电感耦合等离子体发射光谱(CID-ICPES)测定稀土元素的分析性能。
6) charge injection
电荷注入
1.
With this energy model, and considering the influences of charge injection and field electron emis.
基于固体的能带理论 ,提出了 2类试品在金属电极 介质的界面处不同的能量状态分布模型 ;并在此基础上同时考虑电荷注入复合和场致电子发射对发光的影响 ,解释了 2类试品发光的差异性 ,指出了采用和未采用真空溅射金属电极的氧化铝陶瓷存在不同的沿面闪络起始机理及发展过程。
2.
The nonideal characteristics of switched capacitor(SC) integrators is analysed in detail, and a noninverting SC integrator that is insensitive to parasitic capacitors is presented, with shunt capacitors especially to reduce the harmonic distortion and noise caused by channel charge injection.
分析了开关电容积分器的非理想特性,同时设计了一个对寄生电容不敏感的同相开关电容(SC)积分器,并特别采用旁路电容减小沟道电荷注入引起的谐波失真和噪声。
3.
The circuit non-idealities of the modulator such as charge injection errors, conductance ratio error, settling error and kT/C noise were modeled behaviorally using SIMULINK based on the relationship between error and parameters of MOS FET.
通过计算晶体管模型参数与误差的关系对电路的非理想特性如:电荷注入误差、输入输出电导比误差、设置误差噪声误差等进行了SIMULINK行为建模。
补充资料:CID
分子式:C7H6N4O
分子量:162.15
CAS号:暂无
性质:浅黄色至白色粒状结晶。熔点115-122℃。
制备方法:暂无
用途:合成各种酰基咪唑有价值的重要中间体,也是合成吡藜酰胺的重要中间体。
分子量:162.15
CAS号:暂无
性质:浅黄色至白色粒状结晶。熔点115-122℃。
制备方法:暂无
用途:合成各种酰基咪唑有价值的重要中间体,也是合成吡藜酰胺的重要中间体。
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
参考词条