1) Charge injection effect
电荷注入效应
1.
Charge injection effect and clock feedthrough effect,which affect the precision of sample and hold circuits,are analyzed.
文章对影响采样/保持电路精度的电荷注入效应和时钟馈通效应进行了分析,提出了一种全差分CMOS采样/保持电路的设计方案,有效地消除了电荷注入效应误差和时钟馈通误差,极大地减小了其非线性误差,并保证了较高的精度。
2) charge injection
电荷注入
1.
With this energy model, and considering the influences of charge injection and field electron emis.
基于固体的能带理论 ,提出了 2类试品在金属电极 介质的界面处不同的能量状态分布模型 ;并在此基础上同时考虑电荷注入复合和场致电子发射对发光的影响 ,解释了 2类试品发光的差异性 ,指出了采用和未采用真空溅射金属电极的氧化铝陶瓷存在不同的沿面闪络起始机理及发展过程。
2.
The nonideal characteristics of switched capacitor(SC) integrators is analysed in detail, and a noninverting SC integrator that is insensitive to parasitic capacitors is presented, with shunt capacitors especially to reduce the harmonic distortion and noise caused by channel charge injection.
分析了开关电容积分器的非理想特性,同时设计了一个对寄生电容不敏感的同相开关电容(SC)积分器,并特别采用旁路电容减小沟道电荷注入引起的谐波失真和噪声。
3.
The circuit non-idealities of the modulator such as charge injection errors, conductance ratio error, settling error and kT/C noise were modeled behaviorally using SIMULINK based on the relationship between error and parameters of MOS FET.
通过计算晶体管模型参数与误差的关系对电路的非理想特性如:电荷注入误差、输入输出电导比误差、设置误差噪声误差等进行了SIMULINK行为建模。
3) Charging effect
荷电效应
1.
Evaluation of charging effect on the non-conductive specimens by absorbe current measurement;
非导电样品荷电效应的吸收电流评价方法
2.
It has been observed that serious charging effect occurred which caused the ion beam to be deflected for the electrically insulated sample 2, and the charging effect could be eliminated by using electron flood gun.
观察到荷电效应对ISS分析有严重影响 。
3.
The characteristic peak of three elements of Ar, contamination carbon and deposited monolayer Au were considered as reference peak to correct the shift of the XPS spectra caused by charging effect during the XPS analysis process, and the results of XPS and FTIR analyses were compared to estimate the correctness of this method.
分别采用氩峰、污染碳和沉积单层金3种元素峰位来校正在XPS测试过程中由荷电效应引起的峰位移动,并与傅立叶红外光谱(FTIR)进行比较,讨论了这3种校正荷电效应的元素峰位选取对正确表征BCN膜结构的影响。
5) light injecting effect
光注入效应
6) charge injection capacitance
电荷注入电容
1.
This paper gives a compensation method to balance the charge injection capacitance by the circuit itself.
这里给出一种补偿方法 ,使得可以通过充放电电路本身来测得的电荷注入电容得到补偿 ,并经过实验证明了这种补偿的有效性 。
补充资料：电荷注入检测器
分子式：
CAS号：
性质：一种光学多道检测器。和电荷耦合检测器一样，也是一种电荷转移器件。但它的灵敏度比电荷耦合检测器高一个数量级，更适合于弱光的检测，在紫外区仍有良好的量子效率。
CAS号：
性质：一种光学多道检测器。和电荷耦合检测器一样，也是一种电荷转移器件。但它的灵敏度比电荷耦合检测器高一个数量级，更适合于弱光的检测，在紫外区仍有良好的量子效率。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条