1) Argon-Ion Laser
氩离子雷射
2) Ar+ ion-beam etching
氩离子溅射
3) Ar plasma jet
氩等离子束射流
1.
For realizing real-time 3D temperature field reconstruction of Ar plasma jet,an orthogonal area array CCD (charge coupled device) spectrum tomography experimental system was proposed according to spectrum relative intensity diagnosis method.
根据谱线相对强度法,提出了利用正交面阵CCD光谱层析技术,实时重建氩等离子束射流三维温度场的方法。
4) Ar Laser
氩雷射
5) krypton lasers
氪离子雷射
6) argon ion
氩离子
1.
A low energy argon ion beam has been applied to bombard the backsurface of silicon wafers after the ultrahigh frequency low power transistors are fabricated, and the noise coefficient of low frequency and high frequency can be decreased effectively, the characteristics frequency and current gain of direction current can be increased.
在完成超高频小功率晶体管的芯片和上部铝电极的制备工艺后 ,采用低能量氩离子束轰击芯片背面 ,能有效地降低其高频及低频噪声系数、提高其特征频率和电流放大系数 。
2.
when low energy argon ion beam bombards the backsurface of silicon wafers, after the high frequency low power transistor and ultrahigh frequency low power transistor are fabricated, it can increase effectively the D-C current gain hFE, the A-C current gain h21 and the character frequency fT, and improve the collector-base junction breakdown characteristics.
在制造硅npn型高频、超高频小功率晶体管管芯和形成铝电极后,用低能量氩离子束进行背面轰击,能显著增大晶体管的直、交流电流放大系数,提高特征频率和使击穿特性变硬。
补充资料:溅射离子泵(scatteringionpump)
溅射离子泵(scatteringionpump)
溅射离子泵的结构如图。阳极为一薄壁不锈钢筒,阴极为两块薄钛板,分置阳极两方。阳极、阴极一同装于不锈钢外壳中,整个壳体装于一磁场中,磁力线方向平行于阳极筒轴向,磁通密度约1000~2000Gs,工作时极间电压为3~7kV产生潘宁放电,这是一种在很低压强下仍能自持的放电,所以能运用于高真空和超高真空。放电产生的离子轰击阴极时引起金属钛的溅射,溅射的钛沉积于阳极筒内壁及阴极上离子轰击较少的部位。不断地形成新鲜的活性钛膜,吸附气体分子。同时又连续地掩埋吸附于阳极筒内壁及阴极边角部位的气体分子(对惰性气体也有效),形成泵的抽气作用。真空度可达10-11Torr量级。
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
参考词条