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1)  argon-ion gun
氩离子枪
2)  argon ion
氩离子
1.
A low energy argon ion beam has been applied to bombard the backsurface of silicon wafers after the ultrahigh frequency low power transistors are fabricated, and the noise coefficient of low frequency and high frequency can be decreased effectively, the characteristics frequency and current gain of direction current can be increased.
在完成超高频小功率晶体管的芯片和上部铝电极的制备工艺后 ,采用低能量氩离子束轰击芯片背面 ,能有效地降低其高频及低频噪声系数、提高其特征频率和电流放大系数 。
2.
when low energy argon ion beam bombards the backsurface of silicon wafers, after the high frequency low power transistor and ultrahigh frequency low power transistor are fabricated, it can increase effectively the D-C current gain hFE, the A-C current gain h21 and the character frequency fT, and improve the collector-base junction breakdown characteristics.
在制造硅npn型高频、超高频小功率晶体管管芯和形成铝电极后,用低能量氩离子束进行背面轰击,能显著增大晶体管的直、交流电流放大系数,提高特征频率和使击穿特性变硬。
3)  Argon ion source
氩离子源
4)  argon ion beam
氩离子束
5)  Ar~+ sputtering
氩离子轰击
1.
To make uniformly sized and spaced Ag clusters, the HOPG surface was modified by thermal oxidization and Ar~+ sputtering before Ag deposition, respectively.
本文分别采用加热氧化和氩离子轰击来改变HOPG衬底的表面结构,并用扫描隧道显微镜(STM)研究了银在它们上面的生长过程。
6)  argon plasma
氩等离子体
1.
Improvement of ultrahigh molecular weight polyethylene fibers′ interface property by atmospheric argon plasma;
常压氩等离子体改善超高分子量聚乙烯纤维的界面性能
2.
Impact on water sorption and solubility of SY-1 facial elastomer treated with Argon plasma
氩等离子体对国产SY-1硅橡胶吸水率、溶解率的影响
3.
When materials processing using laminar argon plasma jets is performed in ambient air, the entrainment of air into the jets will lead to the oxidation of processed metallic materials.
在空气环境中利用氩等离子体射流进行材料加工时,环境空气卷吸进入射流可能会引起金属材料氧化。
补充资料:氩离子激光器
分子式:
CAS号:

性质:一种惰性气体离子激光器,其激活介质是氩气。它是目前在可见光区最强的相干光源,可以是脉冲的,也可以是连续工作的,其输出可从紫外光到可见光的蓝绿光区含十几条光谱线,其中功率最大使用最多的是0.488μm(蓝光)和0.5145μm(绿光)。氩离子激光由于单色性好,输出功率大,方向性强,稳定性能好,噪声小,加之处于光电器件和感光胶片接收最灵敏的蓝绿光区,因此用途非常广泛,包括印刷工业的电子分色、PS版、激光制版、全息照片、激光印字机等领域。

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