A low energy argon ion beam has been applied to bombard the backsurface of silicon wafers after the ultrahigh frequency low power transistors are fabricated, and the noise coefficient of low frequency and high frequency can be decreased effectively, the characteristics frequency and current gain of direction current can be increased.

when low energy argon ion beam bombards the backsurface of silicon wafers, after the high frequency low power transistor and ultrahigh frequency low power transistor are fabricated, it can increase effectively the D-C current gain hFE, the A-C current gain h21 and the character frequency fT, and improve the collector-base junction breakdown characteristics.

To make uniformly sized and spaced Ag clusters, the HOPG surface was modified by thermal oxidization and Ar~+ sputtering before Ag deposition, respectively.

Improvement of ultrahigh molecular weight polyethylene fibers′ interface property by atmospheric argon plasma;

Impact on water sorption and solubility of SY-1 facial elastomer treated with Argon plasma

When materials processing using laminar argon plasma jets is performed in ambient air, the entrainment of air into the jets will lead to the oxidation of processed metallic materials.