1) electron beam deposition
电子束蒸涂
2) electron beam evaporation
电子束蒸发
1.
Photoelectrical properties and microstructure of ITO films prepared by electron beam evaporation;
电子束蒸发技术制备ITO薄膜的光电特性和微结构研究
2.
Characteristic study of nano ZnO films prepared by electron beam evaporation;
电子束蒸发制备纳米ZnO薄膜及其特性研究
3.
Roughness and light scattering properties of ZrO_2 thin films deposited by electron beam evaporation;
电子束蒸发氧化锆薄膜的粗糙度和光散射特性
3) E-beam evaporation
电子束蒸镀
1.
01)O thin films which has been prepared on the (001) plane of Si substrate by the method of e-beam evaporation.
用X射线衍射方法分析了在Si(001)衬底上电子束蒸镀制备的Zn0。
2.
050O thin films prepared by method of e-beam evaporation on Si substrate at 200～500℃for substrate temperatures(Ts) are characterized using x-ray diffraction method, which shows all these films orientating well along \ except the film prepared at 200℃ and having similar crystal parameters.
在200～500℃的衬底温度范围内,用电子束蒸镀法在Si衬底上制备了沿[002]取向的Zn0。
3.
ITO film used in semiconductor LED process is fabricated with vacuum E-beam evaporation.
用真空电子束蒸镀的方法制备半导体发光二极管LED所用的ITO膜,然后在N2气环境中进行快速热退火(RTA)处理,对ITO膜的各项特性进行测试分析。
4) electron-beam evaporation
电子束蒸发
1.
Influence of substrate temperature on properties of ZnS films prepared by electron-beam evaporation
基片温度对电子束蒸发的ZnS薄膜性能的影响
2.
The Si/Co/Cu/Co multilayers are prepared by the ultra-high vacuum electron-beam evaporation on the Si(100) substrate.
用超高真空电子束蒸发方法在S i(100)衬底上制备了S i/Co/Cu/Co多层膜。
3.
With Al_2O_3 film deposited by electron-beam evaporation as an example, the technique of dielectric film wasintroduced.
以Al_2O_3薄膜为例,介绍了用电子束蒸发制备介质薄膜的工艺。
5) electron beam evaporation
电子束蒸镀
1.
Characteristics of chromium-aluminum-silicon dioxide thin films deposited on PMMA glass substrate by electron beam evaporation process;
有机玻璃基材表面电子束蒸镀铬-铝-二氧化硅薄膜及其性能研究
2.
ZnO;Al(ZAO) films were prepared by electron beam evaporation on Si (100) substrates, followed by annealing in oxygen ambient from 400℃ to 800℃.
采用电子束蒸镀方法在Si(100)衬底上沉积了ZnO:Al(ZAO)薄膜。
6) E-beam evaporation
电子束蒸发
1.
Fabrication and properties of p-CuAlO_2 films by e-beam evaporation;
电子束蒸发制备CuAlO_2透明导电膜及光学性质
2.
A full automatic UHV e-beam evaporation control system for thin film growth
一种全自动超高真空电子束蒸发薄膜生长系统
3.
The work on fabrication of MgB_2 superconducting thin films via E-Beam evaporation approach is reported.
报道了采用电子束蒸发技术实现MgB2薄膜制备的实验工作。
补充资料：电子束蒸发（electron-beamevaporation）
电子束蒸发（electron-beamevaporation）
电子束蒸发是一种清洁的金属薄膜淀积工艺。由热丝发射的电子经过聚焦、偏转和加速以后形成能量约为10keV的电子束，然后轰击放在有冷却水套的容器中的金属并使之蒸发。蒸发的金属在置于附近的衬底（如硅片）上淀积，从而获得有一定厚度的金属镀层。电子束蒸发具有沾污轻和适用范围广的优点，但不适用于多元合金及易被电子束分解的化合物。铝受电子束轰击激发出的特征X射线会对器件造成损伤。电子束还可能使真空室内残余气体和一部分蒸发的金属原子电离。电子束蒸发在半导体集成电路中的主要应用是引线金属化层的淀积。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条