1) double source electron beam evaporation
双源电子束蒸发
1.
This paper introduces the formation of optical thin film by the double source electron beam evaporation,the Si/SiO_2 mixed thin film is evaporated on the K9 glass.
采用双源电子束蒸发的方法,在K9玻璃基片上蒸镀Si和SiO2得到的混合膜层,折射率不仅可调,而且比Si膜要高。
2.
A Si/SiO_2 mixed thin film is evaporated onto K9 glass by double source electron beam evaporation.
用双源电子束蒸发的方法,在K9玻璃基片上蒸镀Si和SiO_2的混合膜。
2) electron beam evaporation
电子束蒸发
1.
Photoelectrical properties and microstructure of ITO films prepared by electron beam evaporation;
电子束蒸发技术制备ITO薄膜的光电特性和微结构研究
2.
Characteristic study of nano ZnO films prepared by electron beam evaporation;
电子束蒸发制备纳米ZnO薄膜及其特性研究
3.
Roughness and light scattering properties of ZrO_2 thin films deposited by electron beam evaporation;
电子束蒸发氧化锆薄膜的粗糙度和光散射特性
3) electron-beam evaporation
电子束蒸发
1.
Influence of substrate temperature on properties of ZnS films prepared by electron-beam evaporation
基片温度对电子束蒸发的ZnS薄膜性能的影响
2.
The Si/Co/Cu/Co multilayers are prepared by the ultra-high vacuum electron-beam evaporation on the Si(100) substrate.
用超高真空电子束蒸发方法在S i(100)衬底上制备了S i/Co/Cu/Co多层膜。
3.
With Al_2O_3 film deposited by electron-beam evaporation as an example, the technique of dielectric film wasintroduced.
以Al_2O_3薄膜为例,介绍了用电子束蒸发制备介质薄膜的工艺。
4) E-beam evaporation
电子束蒸发
1.
Fabrication and properties of p-CuAlO_2 films by e-beam evaporation;
电子束蒸发制备CuAlO_2透明导电膜及光学性质
2.
A full automatic UHV e-beam evaporation control system for thin film growth
一种全自动超高真空电子束蒸发薄膜生长系统
3.
The work on fabrication of MgB_2 superconducting thin films via E-Beam evaporation approach is reported.
报道了采用电子束蒸发技术实现MgB2薄膜制备的实验工作。
5) electron beam evaporation plating
电子束蒸发镀
1.
In this present paper,the operation technology for preparation of aluminium-chromium alloy coating by electron beam evaporation plating was studied.
研究了电子束蒸发镀沉积Al-Cr合金涂层的工艺 ,探讨了铬含量对涂层耐蚀性的影响 ,对涂层的物相、形貌以及热处理对涂层和基体之间热扩散的影响进行了分析 。
补充资料:电子束蒸发(electron-beamevaporation)
电子束蒸发(electron-beamevaporation)
电子束蒸发是一种清洁的金属薄膜淀积工艺。由热丝发射的电子经过聚焦、偏转和加速以后形成能量约为10keV的电子束,然后轰击放在有冷却水套的容器中的金属并使之蒸发。蒸发的金属在置于附近的衬底(如硅片)上淀积,从而获得有一定厚度的金属镀层。电子束蒸发具有沾污轻和适用范围广的优点,但不适用于多元合金及易被电子束分解的化合物。铝受电子束轰击激发出的特征X射线会对器件造成损伤。电子束还可能使真空室内残余气体和一部分蒸发的金属原子电离。电子束蒸发在半导体集成电路中的主要应用是引线金属化层的淀积。
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
参考词条