1) heavily doped region
重掺杂区
3) heavy doped
重掺杂
1.
Thin silicon foils with thickness about 3 to 4 μm are prepared by semiconductor process combined with heavy doped self stop etching process.
以重掺杂自截止腐蚀工艺制备的厚度为 3～ 4μm的自支撑Si平面薄膜已在X光激光和惯性约束聚变分解实验中得到应用。
2.
The LiCoO 2 cathode for molten carbonate fuel cell (MCFC) was doped with Mg by semiconductor doping method, and then was heavy doped with rare earth elements La and Ce.
用半导体掺杂法将LiCoO2 阴极掺杂Mg ,又重掺杂La和Ce等稀土元素。
4) heavy doping
重掺杂
1.
Effects of Strain Induced Splitting of Energy Bands on the Bandgap Narrowing Due to Heavy Doping in Strained Si_(1-x)Ge_x Layers;
应变致能带分裂对Si_（1－x）Ge_x应变层中重掺杂禁带窄变的影响
5) highly doped
重掺杂的
6) FZ-doping
区熔掺杂
