1) Be-doped InGaAs base
Be掺杂InGaAs基区
3) InGaAs base
InGaAs基区
4) base doping concentration
基区掺杂浓度
1.
Base on the structure characteristic and work principle of filed stop IGBT,a new way was put forward to calculate the base doping concentration by extracting current-tail.
基于场终止型IGBT的结构特点与工作机理,提出了一种通过提取IGBT拖尾电流计算基区掺杂浓度新方法,该方法针对已有商用器件只需测试端口电气参数而无需破坏性实验,具有易操作、准确性高的特点。
5) FZ-doping
区熔掺杂
6) heavily doped region
重掺杂区
补充资料：2-甲氧基碳酸基乙基胺基乙基胺基丙基三甲氧基硅烷
CAS: 1067-66-9
分子式: C12H28N2O5Si
分子量: 308.45
中文名称: 2-甲氧基碳酸基乙基胺基乙基胺基丙基三甲氧基硅烷
英文名称: [N'-(2-Methoxycarbonylethyl)aminoethylaminopropyl]trimethoxysilane
10-diaza-3-silatridecan-13-oic acid, 3,3-dimethoxy-2-oxa- methyl ester
n-(2-((3-(trimethoxysilyl)propyl)amino)ethyl)-beta-alanin methyl ester
methyl 3,3-dimethoxy-2-oxa-7,10-diaza-3-silatridecan-13-oate
methyl[2-(3-trimethoxysilylpropylamino)-ethylamino
分子式: C12H28N2O5Si
分子量: 308.45
中文名称: 2-甲氧基碳酸基乙基胺基乙基胺基丙基三甲氧基硅烷
英文名称: [N'-(2-Methoxycarbonylethyl)aminoethylaminopropyl]trimethoxysilane
10-diaza-3-silatridecan-13-oic acid, 3,3-dimethoxy-2-oxa- methyl ester
n-(2-((3-(trimethoxysilyl)propyl)amino)ethyl)-beta-alanin methyl ester
methyl 3,3-dimethoxy-2-oxa-7,10-diaza-3-silatridecan-13-oate
methyl[2-(3-trimethoxysilylpropylamino)-ethylamino
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条