1) gaseous source predeposition
气体源预淀积
2) pre-deposition process
预淀积
1.
The diffusion was researched through analyzing characteristics of the pre-deposition process and the drive-in process.
结合预淀积和再分布两种条件下扩散的特点,采用两步法工艺制备了高浓度硼深扩散硅片,研究了影响杂质浓度和扩散深度的再分布与预淀积时间比。
3) boron pre-deposition
硼预淀积
1.
Effect of boron pre-deposition on size distribution of self-assembled Ge islands fabricated by UHV/CVD;
硼预淀积对自组织生长Ge量子点尺寸分布的影响
4) point source diffusive percolation
点源淀积
5) vapor deposition
气相淀积
1.
Two important parameters in the process of laser induced plasma chemical vapor deposition film size and deposition rate are deduced with shock wave theory The influence of laser intensity,atmosphere and pedestal temperature on the deposition process is analyse
用激波理论推出了激光诱导等离子体化学气相淀积过程中两个重要参量薄膜面积、膜淀积速率的表达式。
6) PECVD
等离子体化学气相淀积
1.
In this paper,plasma-enhanced chemical vapor deposition (PECVD) technique was used to deposit the dielectric P-SiO2 films and P-SiON films on the silicon wafer under the conditions of low temperature and low pressure with TEOS organic sourse.
本文是利用等离子体化学气相淀积法(Plasma Enhanced Chemical Vapor Deposition，PECVD)，在低温低压下，使用有机物TEOS(正硅酸四乙脂，Tetraethylorthosilicate，Si(C_2H_5O)_4)为反应源在硅片表面上生长P-SiO_2介质膜以及P-SiON钝化膜，利用制程参数(RF功率、基板温度、气体流量以及反应压力)的改变，来探讨对薄膜的生长特性、硬度、应力、附着性及折射率的影响。
补充资料：淀脚绡
1.瓜名。
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