1) montanite
[mɔn'tænait]
碲铋华
2) Bi_2Te_3
碲化铋
1.
Effect of preparation methods on thermoelectric properties of p-type Bi_2Te_3-based materials;
制备工艺对p型碲化铋基合金热电性能的影响
2.
Peparation of Bi_2Te_3-polyaniline Heterostructured Nanorods by Two-step Electrochemical Depositions;
二次电化学沉积法制备聚苯胺-碲化铋复合纳米棒
3.
Effect of Extra Te Content on Thermoelectric Properties of p-type Bi_2Te_3-Based Materials;
额外Te的掺杂量对P型碲化铋基合金热电性能的影响
3) bismuth selenium tellurium
铋、硒、碲
1.
In the paper, the impurity elements by hydride generation the inductively coupled plasma atomic emission spectrometry for the determination of bismuth selenium tellurium.
采用氢化还原法,分离富集钽中微量杂质元素,然后采用ICP-AES测定其中铋、硒、碲等杂质元素。
4) Tellurium-bismuth concentrate
碲铋精矿
5) Bi Te ore
铋碲矿
1.
Bi Te ore is leached with HCl+NaClO 3 .
铋碲矿用盐酸加氯酸钠浸出 ,浸出液用Na2 SO3 还原得粗碲粉 ,还原后液水解回收铋。
6) tsumoite
楚碲铋矿
1.
The graphic-myrmekitic pyrrhotites of the tsumoite have compositions similar to those of early stages, but their spatial elongation and size change are in contradiction with experiments and theoretical models.
大水沟楚碲铋矿的产状及其文像矿物形态既有普遍的“交代”现象,也有明显的“出溶”特征。
2.
The name was changed to pilsenite in 1982 with the formula being changed to Bi 4Te 3, and tsumoite was found within the compositional range of former wehrlite.
楚碲铋矿 (BiTe)的成分介于原叶碲铋矿的成分范围之内。
补充资料：碲化铋晶体
分子式：Bi2Te3
CAS号：
性质：周期表第V,VI族元素化合物半导体。三角晶，原胞为菱形六面体，晶格常数1.0473nm，密度7.8587g/cm3。熔点575℃。由共价键结合，有一定离子键成分。为间接带隙半导体，室温禁带宽度0.145eV，电子和空穴迁移率分别为0.135和4.4×10-2m2/(V·s)，温差电优质系数1.6×10-3/K。采用布里奇曼法、区域熔炼法、直拉法制备。为良好的温差材料。
CAS号：
性质：周期表第V,VI族元素化合物半导体。三角晶，原胞为菱形六面体，晶格常数1.0473nm，密度7.8587g/cm3。熔点575℃。由共价键结合，有一定离子键成分。为间接带隙半导体，室温禁带宽度0.145eV，电子和空穴迁移率分别为0.135和4.4×10-2m2/(V·s)，温差电优质系数1.6×10-3/K。采用布里奇曼法、区域熔炼法、直拉法制备。为良好的温差材料。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条