1) chemical vapor deposition and infiltration
化学气相渗透沉积
2) chemical vapor deposition/infiltration
化学气相沉积/渗透
3) chemical vapor infiltration(CVI)
化学气相渗透(CVI)
4) chemical vapor infiltration
化学气相渗透
1.
TaC was deposited by a chemical vapor infiltration(CVI) method with TaCl5-Ar-C3H6 system in the carbon fiber felt.
利用TaCl5-Ar-CaH6反应体系,用化学气相渗透(CVI)的方法,在炭毡中炭纤维表面沉积TaC。
2.
Chemical vapor infiltration processing (CVI) are considered as the most important technique for fabrication of carbon/carbon composites.
化学气相渗透技术是制备高性能C/C复合材料的一种重要方法。
3.
During thermal gradient chemical vapor infiltration(TCVI)fabricating C/C compos- ites,the complex change of the temperature field is difficult to solve by using analytics.
针对C/C复合材料热梯度化学气相渗透工艺(TCVI)致密化过程温度场难以用解析法求解的问题,建立了TCVI过程非稳态温度场有限元模型,给出了该过程温度场变化的分布曲线,研究了温度场变化规律及致密化效率与沉积温度的关系,数值模拟结果与实验结果吻合较好,为提高TCVI工艺致密化效率提供了理论指导。
5) chemical vapor infiltration
化学气相渗透法
1.
0% fabricated by the chemical vapor infiltration was studied using oxyacetylene ablation equipment.
用化学气相渗透法制备了三维针刺碳纤维增强碳化硅陶瓷基复合材料,复合材料的平均密度为2。
2.
5 D) carbon-fiber-reinforced silicon carbide(C/SiC) composite were prepared by the chemical vapor infiltration process and the tensile properties of the composites along the warp and weft direction were compared as a function of fiber architectures and processing-induced cracks.
采用化学气相渗透法制备了2维和2。
6) CVI
化学气相渗透
1.
Progress in Studies on Fabrication of C/C with CVI Techniques;
化学气相渗透工艺制备C/C研究进展
2.
A novel highly efficient ICVI process, which is realized at ambient pressure by using propylene as feeding precursor gas and nitrogen as diluted gas, is developed to improve the tranditional ICVI processes.
将传统的负压等温化学气相渗透(ICVI)工艺加以改进,在常压条件下以丙烯为气态前驱体,氮气为稀释气体,通过定向扩散和控制滞留时间,经 100h沉积后制备出密度为 1 72g/cm3 的 C/C复合材料。
3.
The woven carbon fiber reinforced C-SiC binary matrix(C/C-SiC) composite manufactured by chemical vapor infiltration(CVI) method was investigated.
通过观察C/C-SiC复合材料组元分布的扫描电子显微镜(SEM)照片,获得了C/C-SiC复合材料化学气相渗透(CVI)制备过程中产生孔隙和微裂纹的几何信息。
补充资料：等离子化学气相沉积
分子式：
CAS号：
性质：PCVD 化学气相沉积(CVD)法是制备无机材料，尤其是无机薄膜和涂层的一种重要手段。用等离子辅助CVD，可在较低的温度下沉积，涂层均匀不剥落。
CAS号：
性质：PCVD 化学气相沉积(CVD)法是制备无机材料，尤其是无机薄膜和涂层的一种重要手段。用等离子辅助CVD，可在较低的温度下沉积，涂层均匀不剥落。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条