1) Amorphous Silicon-based Films
非晶硅基薄膜
1.
Structure and Luminescent Properties of the Doped Amorphous Silicon-based Films;
掺杂非晶硅基薄膜的结构及发光特性研究
2) non-crystalline silicon based film
非单晶硅基薄膜
1.
Study on luminescent property of non-crystalline silicon based films;
非单晶硅基薄膜光致发光特性的研究
3) a-Si thin film
非晶硅薄膜
1.
An a-Si thin film diodes with big current densities and high on/off ratios was presented by PECVD technology.
报道了采用PECVD薄膜沉积技术制备的大电流、高开关比非晶硅薄膜二极管,在制备工艺温度低于200℃下,获得正向电流密度大于50A/cm-2,±3V偏压时开关比接近105的优质非晶硅薄膜二极管,完全符合三维集成电路(3D IC)中三维只读存储器(3D ROM)的要求。
5) amorphous silicon film
非晶硅薄膜
1.
Investigation of microstructure and photoelectric properties of boron-doped amorphous silicon films;
掺硼非晶硅薄膜的微结构和电学性能研究
2.
We developed a new process for low temperature crystallization of amorphous silicon films, by metal induced crystallization of amorphous silicon films at low temperature.
介绍了一种非晶硅薄膜低温晶化的新工艺———金属诱导非晶硅薄膜低温晶化。
3.
In this paper, the new process for crystallization of amorphous silicon films, named the metal induced lateral crystallization of amorphous silicon films at low temperatures, was developed.
本文研究了一种低温制备多晶硅薄膜的新工艺：金属诱导非晶硅薄膜低温晶化法。
6) amorphous silicon thin film
非晶硅薄膜
1.
Study on aluminum-induced crystallization of amorphous silicon thin film;
铝诱导晶化非晶硅薄膜研究
2.
This article presents and discusses main recrystallization technology of amorphous silicon thin films, including conventional furnace annealing, metal-induced crystallization, microwave-induced crystallization, rapid thermal annealing and laser crystallization.
论述了非晶硅薄膜的主要再结晶技术,包括传统的炉子退火、金属诱导晶化、微波诱导晶化、快速热退火和激光晶化。
3.
The amorphous silicon thin film transistor (a-Si:H TFT) structure for effectively suppressing backlight illumination effect is proposed in this paper.
提出一种能有效抑制背光照影响的非晶硅薄膜晶体管 (a -Si:HTFT)结构。
补充资料：稀土-铁族金属非晶薄膜磁光材料
分子式：
CAS号：
性质：用稀土和铁族金属制成的薄膜磁光材料其组成、电和磁性能及单轴各向异性受沉积条件及靶材成分影响。非晶态霍耳电压(VH)与磁场关系和极向克尔磁带回线相似，在补偿温度(Tcomp)附近，霍尔系数R1改变符号，当T<Tcomp时，R1为负，相反为正。其制备方法为高频溅射、真空蒸发、磁控溅射等。
CAS号：
性质：用稀土和铁族金属制成的薄膜磁光材料其组成、电和磁性能及单轴各向异性受沉积条件及靶材成分影响。非晶态霍耳电压(VH)与磁场关系和极向克尔磁带回线相似，在补偿温度(Tcomp)附近，霍尔系数R1改变符号，当T<Tcomp时，R1为负，相反为正。其制备方法为高频溅射、真空蒸发、磁控溅射等。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条