1) AZO homo-buffer layer
AZO同质缓冲层
2) homogeneity buffer layer
同质缓冲层
1.
The bilayer thin films use the low density thin films prepared at lower sputtering power as the buffer layer(homogeneity buffer layer).
采用射频磁控溅射法制备了以低功率溅射得到的PbxSr1-xTiO3(PST)薄膜为缓冲层(同质缓冲层)的PST双层薄膜。
3) Buffer layer
缓冲层
1.
Influence of buffer layers on the anisotropic magnetoresistance of NiCo films;
缓冲层对NiCo薄膜各向异性磁致电阻的影响
2.
Sputtering growth of preferential c-axis-oriented aluminum nitride film using homogeneous buffer layer;
利用同质缓冲层溅射生长c轴择优取向氮化铝薄膜
3.
Effects of buffer layer on properties of PMS-PNN-PZT piezoelectric thick film material;
缓冲层对PMS-PNN-PZT压电厚膜材料性能的影响
4) NiFe buffer layer
NiFe缓冲层
1.
NiFe buffer layer thin films with nano-sized crystallites were prepared by electrodeposition on semiconductor Si(111) substrates.
采用电化学沉积法,在半导体硅片上制备了具有纳米晶粒尺寸的NiFe缓冲层薄膜,并确定了获得Ni80Fe20合金的工艺条件。
5) buffer layers
缓冲层
1.
Fabrication of buffer layers and YBaCuO coated conductors by all chemical methods
全化学法制备缓冲层和YBaCuO超导涂层
2.
The yttrium-stabilized zirconia(YSZ)and strontium titanium(STO)film buffer layers were prepared by Sol-gel process on Si substrates.
采用溶胶-凝胶法在硅基板上先分别制备钇稳定氧化锆(YSZ)和钛酸锶(STO)两种薄膜缓冲层。
3.
2MnO_3 (110) film was shown when SrMnO3 (40 nm) buffer layers grown at 500 ℃.
当沉积温度为500℃时,在40nm缓冲层SrMnO3上,La0。
6) buffer
[英]['bʌfə(r)] [美]['bʌfɚ]
缓冲层
1.
Growth of high Pyroelectric Ba_(0.65)Sr_(0.35)TiO_3 Films with Ba_(0.65)Sr_(0.35)RuO_3 Buffer;
利用Ba_(0.65)Sr_(0.35)RuO_3缓冲层制备高热释电系数的Ba_(0.65)Sr_(0.35)TiO_3薄膜
2.
GaN Growth on Si Substrate Using Anodic Alumina as Buffer Layer;
阳极氧化铝作缓冲层的Si基GaN生长
3.
Study on Conversion Characteristics of RSD with Structure of "Thin-base, Buffer and Transparent Anode";
“薄基区—缓冲层—透明阳极”RSD换流特性研究
补充资料：有同
1.如同。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条