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1)  ZnO buffer layer
ZnO缓冲层
1.
ZnO buffer layer can also block the hole injection at the interface of anode and hole transporting layer,which can be attributed to the more balanced carriers concentration in emissive layer and rai.
研制了在传统双层有机电致发光器件(OLED)ITO/NPB/AlQ/Al的阳极与空穴传输层间加入ZnO缓冲层的新型器件。
2)  ZnO buffer layers
ZnO缓冲层
1.
ZnO buffer layers and Ga2O3 films were sputtered on silicon substrates using radio frequency sputtering system.
利用射频磁控溅射法在Si衬底上先溅射ZnO缓冲层,接着溅射Ga2O3薄膜,然后ZnO/Ga2O3膜在管式炉中常压下通氨气进行氮化,反应自组生成GaN薄膜。
3)  ZnO film buffer layer
ZnO 薄膜缓冲层
4)  Buffer layer
缓冲层
1.
Influence of buffer layers on the anisotropic magnetoresistance of NiCo films;
缓冲层对NiCo薄膜各向异性磁致电阻的影响
2.
Sputtering growth of preferential c-axis-oriented aluminum nitride film using homogeneous buffer layer;
利用同质缓冲层溅射生长c轴择优取向氮化铝薄膜
3.
Effects of buffer layer on properties of PMS-PNN-PZT piezoelectric thick film material;
缓冲层对PMS-PNN-PZT压电厚膜材料性能的影响
5)  NiFe buffer layer
NiFe缓冲层
1.
NiFe buffer layer thin films with nano-sized crystallites were prepared by electrodeposition on semiconductor Si(111) substrates.
采用电化学沉积法,在半导体硅片上制备了具有纳米晶粒尺寸的NiFe缓冲层薄膜,并确定了获得Ni80Fe20合金的工艺条件。
6)  buffer layers
缓冲层
1.
Fabrication of buffer layers and YBaCuO coated conductors by all chemical methods
全化学法制备缓冲层和YBaCuO超导涂层
2.
The yttrium-stabilized zirconia(YSZ)and strontium titanium(STO)film buffer layers were prepared by Sol-gel process on Si substrates.
采用溶胶-凝胶法在硅基板上先分别制备钇稳定氧化锆(YSZ)和钛酸锶(STO)两种薄膜缓冲层。
3.
2MnO_3 (110) film was shown when SrMnO3 (40 nm) buffer layers grown at 500 ℃.
当沉积温度为500℃时,在40nm缓冲层SrMnO3上,La0。
补充资料:缓冲层
分子式:
CAS号:

性质:斜交轮胎胎面与胎体之间的胶布层或胶层。其主要作用是缓和外来冲击,防止外层胶的龟裂直接抵达胎体帘布层,并承受轮胎在行驶时或突然停止时,由于惯性作用而产生的剪切应力。为此,它应具有较好的导热性、耐老化性、多次变形下的耐疲劳性和低生热性及耐热性等。所用的帘线强度必须高于胎体帘线。

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