1.
Deposition Coated Conductor Buffer Layers Films by Magnetron Sputter Method
磁控溅射法制备涂层导体缓冲层薄膜
2.
Fabrication of buffer layers and YBaCuO coated conductors by all chemical methods
全化学法制备缓冲层和YBaCuO超导涂层
3.
Effect of Buffer Layer Thickness on Ge/Si Multilayer
缓冲层厚度对Ge/Si多层膜的影响
4.
Progress of CSD-buffer Layers for Coated Conductors
CSD制备涂层导体缓冲层的技术进展
5.
Low Temperature Processing Technology for Preparation of Potential DyBiO_3 Buffer Layers of Coated Conductors
涂层导体DyBiO_3(DBO)缓冲层的低温制备
6.
Growth of 3C-SiC Buffer and SiCGe Film on 6H-SiC;
6H-SiC上3C-SiC缓冲层及SiCGe薄膜的生长
7.
Research on Deposition ZnS Buffer Layer by Chemical Solution Methods;
采用液相化学法沉积ZnS缓冲层的研究
8.
Effects of a Buffer Layer on the Hetero-epi-growth of SiCGe on 6H-SiC;
3C-SiC缓冲层对在6H-SiC上生长SiCGe的影响
9.
Preparation of YBiO_3 Buffer Layers and YBCO Superconducting Thin Films by Magnetron Sputtering
磁控溅射制备YBiO_3缓冲层和YBCO超导薄膜
10.
Fabrication of GaN Nanowires on Si(111) Substrates Using Oxide Buffer Layers
氧化物缓冲层制备Si(111)基GaN纳米线
11.
Influence of Aluminum Oxide Buffer Layer on the Properties of ZnO Thin Film
氧化铝缓冲层对ZnO薄膜性质的影响
12.
The Buffer Layer of Al-doped 4H-SiC
Al掺杂4H-SiC同质外延的缓冲层
13.
Effects of SiO_2 Buffer Layer on the Characteristics of Flexible ITO Films
SiO_2缓冲层对柔性ITO薄膜特性的影响
14.
Pulsed Laser Deposited GaN Film and the Effect of ZnO Buffer Layer;
脉冲激光沉积GaN薄膜及ZnO缓冲层的影响
15.
Research on Pulsed Power Switch RSD Based on Buffer Layers;
采用缓冲层结构的脉冲功率开关RSD研究
16.
Study on the Technologies of Manufacturing Metallic Substrates and Buffer Layers for Coated-conductor;
涂层超导体金属基材及缓冲层制备技术的研究
17.
The product is separated from the principle of suction by the absorption layer, a buffer layer, integrated sound insulation layer formed.
该产品采用外隔内吸的原理，由吸声层，缓冲层，隔声层综合而成。
18.
Effect of LiF Buffer Layer Used at Interface between Anode and Organic Layer in Organic Light-emitting Diode
阳极/有机层界面LiF层在OLED中的空穴缓冲作用