1) Ta buffer layer
Ta缓冲层
1.
Results show that the magnetoresistance ratio, coercivity and exchange bias field of the spin-valves are strongly related to the thickness of the Ta buffer layer.
结果表明,Ta缓冲层厚度直接影响它的微结构,从而影响自旋阀的磁电阻率、矫顽力和交换场等性能。
2.
Results show that the magnetoresistance ratio,coercivity and exchange bias field of the spinvalves are strongly related to the thickness of the Ta buffer layer.
通过直流磁控溅射法在硅 /二氧化硅基底上沉积了Ta膜 ,Ta/NiFe双层膜和IrMn顶钉扎自旋阀薄膜 ,研究了Ta、Ta/NiFe膜的晶格结构和表面情况 ,及自旋阀的磁性能 ,结果表明 ,自旋阀的磁电阻率、矫顽力和交换场等性能与Ta缓冲层厚度有密切的关系 ,在Ta缓冲层为 3nm时自旋阀的磁电阻率 (9 2 4 % )和交换场 (2 5 5× (10 3 / 4π)A/m)达到最大值 ,而矫顽力 (2 4 3× (10 3 / 4π)A/m)比较
3.
Results show that the magnetoresistance ratio, coercivity and exchange bias field of the spin-valves are strongly related to the thickness of the Ta buffer layer.
结果表明,Ta缓冲层厚度直接影响它的微结构,从而影响自旋阀的磁电阻率、矫顽力和交换场等性能。
2) Buffer layer
缓冲层
1.
Influence of buffer layers on the anisotropic magnetoresistance of NiCo films;
缓冲层对NiCo薄膜各向异性磁致电阻的影响
2.
Sputtering growth of preferential c-axis-oriented aluminum nitride film using homogeneous buffer layer;
利用同质缓冲层溅射生长c轴择优取向氮化铝薄膜
3.
Effects of buffer layer on properties of PMS-PNN-PZT piezoelectric thick film material;
缓冲层对PMS-PNN-PZT压电厚膜材料性能的影响
3) NiFe buffer layer
NiFe缓冲层
1.
NiFe buffer layer thin films with nano-sized crystallites were prepared by electrodeposition on semiconductor Si(111) substrates.
采用电化学沉积法,在半导体硅片上制备了具有纳米晶粒尺寸的NiFe缓冲层薄膜,并确定了获得Ni80Fe20合金的工艺条件。
4) buffer layers
缓冲层
1.
Fabrication of buffer layers and YBaCuO coated conductors by all chemical methods
全化学法制备缓冲层和YBaCuO超导涂层
2.
The yttrium-stabilized zirconia(YSZ)and strontium titanium(STO)film buffer layers were prepared by Sol-gel process on Si substrates.
采用溶胶-凝胶法在硅基板上先分别制备钇稳定氧化锆(YSZ)和钛酸锶(STO)两种薄膜缓冲层。
3.
2MnO_3 (110) film was shown when SrMnO3 (40 nm) buffer layers grown at 500 ℃.
当沉积温度为500℃时,在40nm缓冲层SrMnO3上,La0。
5) buffer
[英]['bʌfə(r)] [美]['bʌfɚ]
缓冲层
1.
Growth of high Pyroelectric Ba_(0.65)Sr_(0.35)TiO_3 Films with Ba_(0.65)Sr_(0.35)RuO_3 Buffer;
利用Ba_(0.65)Sr_(0.35)RuO_3缓冲层制备高热释电系数的Ba_(0.65)Sr_(0.35)TiO_3薄膜
2.
GaN Growth on Si Substrate Using Anodic Alumina as Buffer Layer;
阳极氧化铝作缓冲层的Si基GaN生长
3.
Study on Conversion Characteristics of RSD with Structure of "Thin-base, Buffer and Transparent Anode";
“薄基区—缓冲层—透明阳极”RSD换流特性研究
6) MgO buffer layer
MgO缓冲层
1.
The results show that the preferred orientation of SBN film can be considerably improved by adding the MgO buffer layer.
采用溶胶 -凝胶法在Si(1 0 0 )基片上制备出择优取向的MgO薄膜 ,随后在其上生长出具有择优取向的铌酸锶钡铁电薄膜 实验发现 ,MgO缓冲层的应用可以大大提高SBN薄膜的择优取向性能 同时 ,用五层对称理想波导耦合模理论 ,以SBN为波导层 ,分析了波导损耗与厚度的关系 通过对计算出的理想结果与实际相结合 ,以及对SBN在生长过程工艺与损耗关系的研究 ,制备出高质量、低损耗的SBN薄膜 ,为其在电光波导调制器等微系统中的应用打下良好的基
补充资料：缓冲层
分子式：
CAS号：
性质：斜交轮胎胎面与胎体之间的胶布层或胶层。其主要作用是缓和外来冲击，防止外层胶的龟裂直接抵达胎体帘布层，并承受轮胎在行驶时或突然停止时，由于惯性作用而产生的剪切应力。为此，它应具有较好的导热性、耐老化性、多次变形下的耐疲劳性和低生热性及耐热性等。所用的帘线强度必须高于胎体帘线。
CAS号：
性质：斜交轮胎胎面与胎体之间的胶布层或胶层。其主要作用是缓和外来冲击，防止外层胶的龟裂直接抵达胎体帘布层，并承受轮胎在行驶时或突然停止时，由于惯性作用而产生的剪切应力。为此，它应具有较好的导热性、耐老化性、多次变形下的耐疲劳性和低生热性及耐热性等。所用的帘线强度必须高于胎体帘线。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条