Purification and stoichiometric concentration control of ZnSe polycrystalline by zone sublimation method;

Research on preparation and structure of porous B-doped polycrystalline diamond;

Growth and Characterization of Polycrystalline HgI_2 Films on Amorphous-Si Film Substrate;

Study of Preparation of Polycrystalline Material of La_(0.5)Sr_(0.5)CoO_3;

Growth of Polycrystalline GaN on Silica Substrate via Ga Nitridation;

Large grain-sized polycrystalline silicon film obtained by SPC of a-Si: H film deposited by PCVD;

Status and development of photovoltaic industry and producing technology of polycrystalline silicon;

ESD protection devices on polycrystalline silicon;

Phosphorous gettering of cast multicrystalline silicon wafers from different positions of the ingot;

on electrical properties of multicrystalline silicon prepared by metallurgic method was investigated.

It is described that a series research of heavy phosphorous diffusion gettering, aluminum and combination of aluminum and phosphorous gettering (evaporation of aluminum on the back of the wafers) are used to fabricate multicrystalline silicon solar cells with different impurity concentration of interstitial oxygen.

Phase-field model of isothermal solidification of binary alloy with multiple grains;