1) polycrystalline thin films
多晶薄膜
1.
SnTe polycrystalline thin films are deposited by the vacuum evaporation method from the former SnTe crystals, and their microstructure, electrical properties, and surface appearance are studied.
以制备的晶体为原料用真空蒸镀法制备了银灰色SnTe多晶薄膜,并对薄膜的显微结构、伏安特性及表面形貌进行了研究。
2.
In this paper,the absorption coefficient α(λ) ,the extinction coefficient k(λ) ,the refractive index n(λ) and the optical energy gap E g(λ) of CuInSe 2 polycrystalline thin films were studied by the properties of the reflection and transmission.
根据ＣｕＩｎＳｅ２多晶薄膜的反射特性和透射特性，研究了薄膜的吸收系数α（λ）、消光系数ｋ（λ）、折射率ｎ（λ）以及光学禁带宽度Ｅｇ。
3.
AlSb polycrystalline thin films are prepared by vacuum co-evaporation and post-annealing.
采用元素共蒸发法结合退火处理制成了AlSb多晶薄膜。
2) polycrystalline thin film
多晶薄膜
1.
CdS/CdTe polycrystalline thin film is a new type of high efficiency and low-cost solar cells, which is most promising for application in refrigeration, because it has many advantages such as few crystalline defects, large gap of energy, high stability, inexpensive and convenient for large area deposition.
CdS CdTe多晶薄膜电池是一种利用CdS的优良窗口效应和CdTe良好的光电转换而做成的一种层叠的异质结薄膜太阳电池 ,是适用于制冷、新型、高效率、低成本的太阳能电池 ,具有低缺陷、能隙大、稳定性好的特点 ,并且制作工艺简单、经济 ,易于大面积沉积 ,而且还具有环保价值。
2.
PbTe polycrystalline thin films with 5 different stoichiometric proportions were deposited by the Vacuum Evaporation m.
此外,以所制备的晶体为原料用真空蒸镀法制备了5种组分的PbTe多晶薄膜,薄膜呈铜黄色,并对它们的显微结构、导电类型、电阻、电阻率和电导率特性进行了研究。
3.
The polycrystalline thin film CdTe solar cell is one of the thin film solar cells which are mainly investigated.
薄膜太阳电池的研究及其应用是当今光伏领域的研究热点，CdTe多晶薄膜太阳电池是受到广泛重视的薄膜电池之一，它的基本特点-多晶薄膜、化合物半导体、异质结器件-导致了一些重要的问题未能得到很好的解决。
3) polycrystalline ZnO films
多晶ZnO薄膜
1.
Highly oriented and transparent polycrystalline ZnO films prepared by RF actively sputtering technique;
RF反应溅射法制备高度取向生长的透明多晶ZnO薄膜
2.
Highly oriented polycrystalline ZnO films were prepared on Si wafer by RF reactive sputtering technique.
采用RF反应溅射法在Si(111)衬底上制备出了沿C轴高度取向的多晶ZnO薄膜。
4) polycrystalline PbI2 thin film
PbI2多晶薄膜
5) TiO_2 polycrystalline thin film
TiO2多晶薄膜
6) polycrystalline silicon film
多晶硅薄膜
1.
Effect of hydrogen dilution on structure and optical properties of polycrystalline silicon films;
氢稀释对多晶硅薄膜结构特性和光学特性的影响
2.
Control of grain size during low-temperature growth of polycrystalline silicon films;
多晶硅薄膜低温生长中晶粒大小的控制
3.
The origin structure of a-Si∶H films is closely related to the recrystallizaiton temperature,the grain size and electrical properties of polycrystalline silicon films,which were formed by recrystallization annealing of a-Si∶H films.
用a -Si∶H薄膜经退火晶化成的多晶硅薄膜 ,其晶化温度、晶粒尺寸和电性能与薄膜的初始结构有密切关系 ,而a -Si∶H薄膜的初始结构依赖于沉积条件。
补充资料：多晶莫来石晶须(纤维)
分子式：
CAS号：
性质：莫来石相为主晶相的多晶纤维。化学成分为Al2O3 72％～77％，SiO222％～17％，B2O3 3％～5％，P2O51.5％～3.0％。纤维直径2～7μm，纤维长度20～125μm。使用温度1350℃。多采用溶胶-凝胶法制造。主要用作补强填料，也可作为轻质、隔热保温材料使用。
CAS号：
性质：莫来石相为主晶相的多晶纤维。化学成分为Al2O3 72％～77％，SiO222％～17％，B2O3 3％～5％，P2O51.5％～3.0％。纤维直径2～7μm，纤维长度20～125μm。使用温度1350℃。多采用溶胶-凝胶法制造。主要用作补强填料，也可作为轻质、隔热保温材料使用。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条