2) As doping
砷掺杂
1.
Based on the electrical properties of the single ZnO nanowire FET before and after annealing,we verified that p-type ZnO nanowire can be obtained by As doping effectively.
采用化学气相沉积(CVD)的方法在砷化镓基底上合成直径为20nm左右、长约数十微米的氧化锌纳米线,然后采用热扩散的方法,将生长于砷化镓基底之上的氧化锌纳米线通过600℃,30min的有氧退火处理后,获得了砷掺杂的氧化锌纳米线。
4) arsenic doped emitter
掺砷发射极
5) arsenic doped epi
掺砷外延层
6) heavily As doped silicon crystal
重掺砷单晶硅
补充资料：掺杂砷和锰的硅酸锌
CAS：68611-46-1
中文名称：掺杂砷和锰的硅酸锌
英文名称：Silicic acid, zinc salt, arsenic and manganese-doped；silicic acid,zinc salt, arsenic and manganese-doped；silicic acid, zinc salt, arsenic andmanganese-doped
中文名称：掺杂砷和锰的硅酸锌
英文名称：Silicic acid, zinc salt, arsenic and manganese-doped；silicic acid,zinc salt, arsenic and manganese-doped；silicic acid, zinc salt, arsenic andmanganese-doped
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参考词条