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1)  WO_3/TiO_2 thin film
WO_3/TiO_2薄膜
1.
The photocatalytic degradation of bromphenol blue(BPB)in aqueous solution was studied with a photocatalytic glass reactor which was made of the glass beads covered by evenly transparent WO_3/TiO_2 thin film in sol-gel process.
采用溶胶-凝胶法,在玻璃珠表面涂覆均匀透明的WO_3/TiO_2薄膜并制成光催化反应器,对水溶液中溴酚蓝(BPB)的光催化降解进行了研究。
2)  WO_3 thin film
WO_3薄膜
1.
To study gasehromies mechanisms of WO_3 thin film to H_2 contribute to developing hydrogen sensors of higher sensitivity.
对WO_3薄膜氢致变色机理的研究有助于研制出更高灵敏度的WO_3基氢敏传感器。
3)  WO_3 films
WO_3薄膜
1.
Study on optical and hydrogen sensing properties of nanocrystalline WO_3 films;
纳米WO_3薄膜的光学性质及氢敏特性研究
4)  WO_3 thin Films
WO_3薄膜
1.
WO_3 thin films have more advantage of reducing the components thickness than WO_3 ceramic so WO_3 thin films thin films have the potential in empoldering lower power and lower nonlinear.
由于WO_3压敏薄膜在降低元件的厚度方面比WO_3陶瓷具有较大的优势,因此WO_3薄膜在开发小功率、低压压敏电阻器方面具有极大的优势和潜力。
5)  nano-WO_3 thin film
纳米WO_3薄膜
1.
This paper introduces and analyzes the preparation methods of nano-WO_3 thin films, as well as its latest researches, applications and future development trend.
综述了纳米WO_3薄膜的几种常用制备方法,并对其优缺点进行了比较,对纳米WO_3薄膜的应用前景作出展望。
6)  TiO_2 film
TiO_2薄膜
1.
Study on Photocatalysis of TiO_2 Film and Its Application in COD Determination;
TiO_2薄膜的光催化性能及其在化学需氧量测定中的应用研究
2.
Nanometer scale TiO_2 films are prepared on glass substrates with film thickness less than 100nm by sol-gel process combining with spin-coating technology.
采用溶胶-凝胶法,利用旋涂技术在玻璃表面制备了膜厚小于100nm的纳米TiO_2薄膜,以去离子水和苯作为水和油模型,利用XRD、AFM系统研究了煅烧温度、粒径及膜厚对薄膜双亲性的影响。
3.
The synthesized TiO_2 films were characterized by X-ray diffraction(XRD),scanning electron microscopy(SEM)and X-ray photoelectron spectroscopy(XPS).
凝胶法在铝基板表面制备了纳米晶TiO_2薄膜。
补充资料:CaO-TiO2-SiO2 ceramics
分子式:
CAS号:

性质:在CaO-TiO2-SiO2三元系统中以CaSiO3与TiO2或以CaTiSiO5与CaTiO3为基料的陶瓷材料。其结构特点是两种晶相共存,性能受晶相比例影响。配比可在一定范围内调节。主要原料为碳酸钙、二氧化钛、二氧化硅,加入少量改性添加剂,经配料、磨细、混合、成型、烧成等工序获得制品,也可先用碳酸钙和二氧化硅高温下合成硅酸钙,用碳酸钙、二氧化硅、二氧化钛高温下合成钛硅酸钙后再进行配料、烧成等,以确保两晶相共存。主要介电性能为:介电常数80~110,介质损耗角正切值(0.8~2.5)×10-4,介电常数温度系数(-450~+550)×10-6/℃。抗电温度(45~55)kV/mm,电阻率(1011~1012)Ω·cm。主要用作温度补偿型陶瓷电容器瓷料。

说明:补充资料仅用于学习参考,请勿用于其它任何用途。
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