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1)  Metal-induced lateral crystallization
金属诱导横向结晶
1.
Also,problems existing in electric field-aided metal-induced lateral crystallization were discussed.
对电场增强金属诱导横向结晶的相关问题进行了探讨,指出适当强度的电场可显著加快横向诱导结晶的速率,但更强电场则会降低该速率,基于电迁移效应对该现象进行了解释。
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2)  metal-induced unilateral crystallization
金属单向诱导横向晶化
3)  electric field aided lateral crystallization(FALC)
电场增强金属诱导横向结晶
4)  MILC
金属诱导横向晶化
1.
,the metal-induced lateral crystallization(MILC),excimer laser annealing(ELA) and inductively coupled plasma CVD(ICP-CVD),with their advantages and disadvantages compared wi.
本文系统介绍了低温多晶硅薄膜的三种制备方法—金属诱导横向晶化法、准分子激光晶化法和电感耦合等离子体化学气相沉积法的原理和研究进展,比较了它们之间各自的优缺点,最后对该领域的发展前景进行了展望。
2.
The principles and progress of LTPS preparation methods including metal induced lateral crystallization(MILC),excimer laser annealing(ELA),catalytic chemical vapor deposition(Cat-CVD) and inductively coupled plasma chemical vapor deposition(ICP-CVD) were systematically introduced.
系统介绍了金属诱导横向晶化法、准分子激光晶化法、触媒化学气相沉积法(Cat-CVD)以及电感耦合等离子体化学气相沉积法(ICP-CVD)制备低温多晶硅薄膜的原理及进展。
3.
Process and material characterization of crystallization of amorphous silicon(a-Si) by metal-induced crystallization(MIC) and metal-induced lateral crystallization(MILC) using sputtered Ni on(amorphous) silicon film to prepare polysilicon(p-Si) film were investigated.
对在氢化非晶硅薄膜(a-Si∶H)上溅射金属Ni的样品进行金属诱导晶化(MIC)/金属诱导横向晶化(MILC),制备多晶硅薄膜(p-Si)的工艺及薄膜特性进行了研究。
5)  metal induced lateral crystallization
金属诱导横向晶化
1.
Poly-Si TFT was fabricated at low temperature by metal induced lateral crystallization.
采用金属诱导横向晶化法低温研制了 poly SiTFT。
6)  metal induced unilateral crystallization
金属诱导单一方向横向晶化
1.
Based on metal induced unilateral crystallization (MIUC) technology,poly-Si thin film transistor (poly-Si TFT) display scan driving circuit and data driving circuit for AM-LCD and AM-OLED were developed,which can be made with the fabrication processes compactable with poly-Si TFT active matrix.
以高性能的金属诱导单一方向横向晶化多晶硅薄膜晶体管(MIUCpoly-SiTFT)为基础,研制出性能能满足AM-LCD和AM-OLED要求、版图和象素尺寸适配、制备工艺和象素电路兼容的多晶硅TFT行扫描和列驱动电路。
补充资料：横向结晶
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性质： 在应力场作用下结晶时，结晶只沿垂直于应力的方向进行。高聚物结晶包括成核和晶体生长二阶段。在静态下结晶形成球晶。在有外应力下，应力加速成核作用，而在应力方向上形成成线排列的晶核称为行核。由于在应力方向上行核密度较大，晶体生长受阻，只能在垂直于应力的方向上自由生长，而形成一种串珠状的球晶结构。

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