1) all-Si optoelectronic integration
全Si光电子集成
1.
We review some new progress on Si photonic devices,such as light-emission diode,lasers,light detectors,light-modulators and photonic crystals with all-Si optoelectronic integration.
介绍了近年内以全Si光电子集成为主要目标的Si光子学研究在各类Si光子器件,如发光二极管、激光器、光探测器、光调制器以及光子晶体等方面所取得的一些最新进展,预计全Si光电子集成技术有望在未来10年内得到突破性的进展。
2) Si optoelectronic integration
Si基光电子集成
3) Si-based photonic integration
Si基光子集成
4) optoelectronic integration
光电子集成
1.
Silicon based light emitting materials are the elemental materials for the future optoelectronic integration.
硅基发光材料是未来光电子集成的基础材料。
2.
The development of GaN material and its optoelectronic devices is one of the hot spots on optoelectronic research fields in recent years, and wafer bonding technology is an attractive fabrication method which has the potential for achieving desirable optoelectronic integration.
GaN材料及其有关光电子器件的研制是近年来光电子研究领域内的研究热点之一,而键合技术又是光电子集成研究领域内一项新的制作工艺。
3.
Silicon is a fundamental material for microelectronics, but Si-based light-emitting materials are necessary for developing optoelectronic integration.
为了发展光电子集成就必须研究硅基发光材料。
补充资料：光电对抗侦察(见光电对抗)
光电对抗侦察(见光电对抗)
electro-optical reconnaissance of electronic warfare
guangdian duikang zheneha光电对抗侦察(elee‘ro一op‘ical reconnais-sanee ofeleetronicwarfare)见光电对抗。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条