1.
Influence of Carrier Lifetime on Silicon-Based Optoelectronics Devices
载流子寿命对Si基光电子器件性能的影响
2.
Si-base Ge Quantum-Dots Photodetector Used in Fiber Communication Field
基于Si衬底Ge量子点光纤通信用光电探测器研制
3.
Electronic Structure and Optical Absorption of Si-doped AlN System
Si掺杂AlN的电子结构和光吸收
4.
Study of Transport and Electroluminescence Mechanism in the Structure of Au/(Si/SiO_2)/p-Si;
Au/（Si/SiO_2）/p-Si结构中载流子输运及电致发光机制的研究
5.
A Study on the Characteristic of Electroluminescence for GaN Based Lateral Structure Blue Light Emitting Diodes on Si Substrate;
Si衬底GaN基同侧结构蓝光LED电致发光特性研究
6.
Fundamental Study of Novel Si-Al Electronic Packaging Materials
新型电子封装Si-Al合金的基础研究
7.
Study on the Reduction of the Dark Current in Si-based Organic Photodetector
降低Si基有机光电探测器暗电流的研究
8.
First-principles Calculation of Electronic Structure and Optical Properties of Si∶Ge
利用第一性原理研究Ge∶Si电子结构与光学性质
9.
Epitaxy of Strain-relaxed SiGe, Ge Films and Fabrication of Ge Photodetectors on Si Substrates
Si基SiGe、Ge弛豫衬底生长及其Ge光电探测器研制
10.
Fabrication and characteristics of Si-based Ge waveguide photodetectors
Si基Ge波导光电探测器的制备和特性研究
11.
Light management in thin film a-Si/μc-Si tandem solar cells
Si基薄膜叠层太阳电池中光的优化分配
12.
Theoretical and Experimental Research on GaAs/Si Heteroepitaxial and Boron-Incorporated Photoelectronic Materials;
GaAs/Si和含B光电子材料异质外延生长的理论和实验研究
13.
GaAs/InP and Si/GaAs Heteroepitaxy and Their Applications in Integrated Optoelectronic Devices
GaAs/InP、Si/GaAs异质外延生长技术及其在集成光电子器件中的应用
14.
First-principles Calculation of the Electronic Structure and Optical Properties of Si-doped InN
Si掺杂InN的电子结构和光学性质的第一性原理计算
15.
Study on the Electronic Structure and Optical Properties of Ru_2Si_3 Epitaxial on Si(001)
Si(001)面上外延生长的Ru_2Si_3电子结构及光学性质研究
16.
Growth and Characterization of Si-based Strain Relaxed SiGe Substrate and SiGe/Si Quantum Wells
Si基SiGe弛豫衬底及SiGe/Si量子阱生长与表征
17.
Preparation of SiGe Buffer Layer by Oxidation of SiGe/Si MQW Structure
氧化SiGe/Si多量子阱制备Si基SiGe弛豫衬底
18.
The SiO_2/Si Interfaces in Si-Based Semiconductor Studied by Positron Annihilation Spectroscopy;
硅基半导体中SiO_2/Si界面行为的正电子湮没谱研究