Silicon based light emitting materials are the elemental materials for the future optoelectronic integration.

The development of GaN material and its optoelectronic devices is one of the hot spots on optoelectronic research fields in recent years, and wafer bonding technology is an attractive fabrication method which has the potential for achieving desirable optoelectronic integration.

Silicon is a fundamental material for microelectronics, but Si-based light-emitting materials are necessary for developing optoelectronic integration.

Development of Si-substrate integrated circuits and new generation dielectric oxide materials for MOS gates;